Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- Journal article
- Creator
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Zhendong Wu (author) (Search by this author)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (Search by this author)
;
;Shigeyoshi Usami (author) (Search by this author);Masayuki Imanishi (author) (Search by this author);Yusuke Mori (author) (Search by this author);Junichi Takino (author) (Search by this author);Kazushi Sumitani (author) (Search by this author)Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, nanoXRD, ML
- Date published
- 2026-02-15
- Updated at
- 2026-02-26 12:30:06 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- Journal article
- Creator
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;Shigefusa F. Chichibu (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (Search by this author)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (Search by this author)AIST;Hiroko Iguchi (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (Search by this author)Fuji Electric Corporation;Shinya Takashima (author) (Search by this author)Fuji Electric Corporation;Katsunori Ueno (author) (Search by this author)Fuji Electric Corporation;Masaharu Edo (author) (Search by this author)Fuji Electric Corporation;Hirotaka Watanabe (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
;
Yoshihiro Irokawa (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-05-14
- Updated at
- 2024-05-09 16:30:16 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
- Journal article
- Creator
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S. Yamada (author) (Search by this author)
https://orcid.org/0009-0004-5821-1078
(unauthenticated)
;
;A. Fujimoto (author) (Search by this author)S. Yagi (author) (Search by this author)
https://orcid.org/0000-0003-4490-6683
(unauthenticated)
;
H. Narui (author) (Search by this author)
https://orcid.org/0000-0003-0803-5550
(unauthenticated)
;
;E. Yamaguchi (author) (Search by this author)Y. Imanaka (author) (Search by this author)
- Keyword
- GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
- Date published
- 2024-06-24
- Updated at
- 2024-07-13 08:30:10 +0900
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- Journal article
- Creator
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Akira Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (Search by this author)Kacper Sierakowski (author) (Search by this author)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (Search by this author)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (Search by this author)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (Search by this author)
;
Michal Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- Date published
- 2026-04-12
- Updated at
- 2026-04-20 08:56:29 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Masataka Imura (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author)
- Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Journal article
- Creator
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Masahiro Hara (author) (Search by this author)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (Search by this author)
;
Yoshihiro Irokawa (author) (Search by this author)
;
;Tomomi Sawada (author) (Search by this author);Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author);Tsunenobu Kimoto (author) (Search by this author)Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Journal article
- Creator
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Yoshihiro Irokawa (author) (Search by this author)National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
;
;Tomomi Sawada (author) (Search by this author)National Institute for Materials Science;Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Journal article
- Creator
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Shunsuke Yamashita (author) (Search by this author)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (Search by this author)Jun Kikkawa (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
;Ryoji Arai (author) (Search by this author)Yuya Kanitani (author) (Search by this author)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yoshihiro Kudo (author) (Search by this author)
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)
;
Mamoru Usami (author) (Search by this author)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Toshihide Nabatame (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2026-05-01
- Updated at
- 2026-05-13 10:14:20 +0900