Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
- Journal article
- Creator
-
Yuhua Tsai (author) (Search by this author)National Institute for Materials Science
;
Masaaki Kobata (author) (Search by this author)
https://orcid.org/0000-0002-9710-6308
(unauthenticated)
;
Tatsuo Fukuda (author) (Search by this author)
https://orcid.org/0000-0002-4832-5862
(unauthenticated)
;
Hajime Tanida (author) (Search by this author)
https://orcid.org/0009-0002-8468-7315
(unauthenticated)
;
;Toru Kobayashi (author) (Search by this author)Yoshiyuki Yamashita (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, dopant, b-Ga2O3
- Date published
- 2024-03-11
- Updated at
- 2024-03-19 12:30:20 +0900
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
- Dataset
- Collection
- Thermophysical Property Original Datasets
- Creator
-
;Takehiko Ishikawa (depositor) (Search by this author)Japan Aerospace Exploration AgencyMasashi Ishii (editor) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Ceramic, Density, ISS-ELF, Electrostatic Levitation, collection - Thermophys Datasets
- Date published
- Updated at
- 2024-03-30 18:40:44 +0900
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- Journal article
- Creator
-
;Qihao Zhang (author) (Search by this author)Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
;Chunming Tu (author) (Search by this author);Dongyuan Zhai (author) (Search by this author);Min He (author) (Search by this author)Jiwu Lu (author) (Search by this author)
- Keyword
- Ga2O3, Transistor
- Date published
- 2023-01-03
- Updated at
- 2025-01-04 16:30:50 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, lithography
- Date published
- 2023-01-01
- Updated at
- 2024-01-24 11:20:15 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH
- Date published
- 2026-02-01
- Updated at
- 2026-02-25 12:30:03 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, wet etching, TMAH
- Date published
- 2026-12-31
- Updated at
- 2026-06-11 15:11:01 +0900
Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, Wet etching
- Date published
- 2025-08-01
- Updated at
- 2025-08-18 16:30:36 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HCl gas etching, air bridge
- Date published
- 2025-05-01
- Updated at
- 2025-05-07 12:30:22 +0900