6 records found.
Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis
- Journal article
- Creator
-
;Kazuma Torii (author) (Search by this author)a Graduate School of Engineering, Nagoya University;Takuto Kojima (author) (Search by this author);Kentaro Kutsukake (author) (Search by this author);Hiroaki Kudo (author) (Search by this author)Noritaka Usami (author) (Search by this author)
- Keyword
- Silicon, dislocation, twin grain boundary, network analysis
- Date published
- 2025-12-31
- Updated at
- 2025-07-16 16:14:54 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
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Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC. - Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
ɤ-TiAl alloy: Revisiting tensile creep deformation behaviour and creep life at 832 °C
- Journal article
- Creator
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Mainak Saha (author) (Search by this author)Metallurgical and Materials Engineering, National Institute of Technology, Durgapur; Indian Institute of Technology, Madras
- Keyword
- ɤ-TiAl, Monkman-Grant parameter, Coble creep, Nabarro-Herring creep, dislocation
- Date published
- 2022-10-31
- Updated at
- 2024-07-30 08:30:09 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
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Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Hiroyuki Ando (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, HVPE
- Date published
- 2023-06-01
- Updated at
- 2024-06-23 08:30:11 +0900