8 records found. Displaying records 1 to 8.
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam
- Journal article
- Creator
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A. Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
R. Tanaka (author) (Search by this author)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
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S. Takashima (author) (Search by this author)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
;
;K. Ueno (author) (Search by this author);M. Edo (author) (Search by this author)K. Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;S. F. Chichibu (author) (Search by this author)J. Uzuhashi (author) (Search by this author)
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T. Ohkubo (author) (Search by this author)
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S. Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
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;K. Sierakowski (author) (Search by this author)M. Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- gallium nitride
- Date published
- 2025-08-27
- Updated at
- 2026-01-05 13:57:59 +0900
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
- Journal article
- Creator
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Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
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Jun Chen (author) (Search by this author)National Institute for Materials Science
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Ashutosh Kumar (author) (Search by this author)
https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
;
Wei Yi (author) (Search by this author)
https://orcid.org/0000-0001-5040-8416
(unauthenticated)
National Institute for Materials Science
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Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
;Ryo Tanaka (author) (Search by this author);Shinya Takashima (author) (Search by this author);Masaharu Edo (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author);Hideki Sakurai (author) (Search by this author);Tetsu Kachi (author) (Search by this author)Takashi Sekiguchi (author) (Search by this author)
https://orcid.org/0000-0002-7365-9979
(unauthenticated)
National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
- Keyword
- gallium nitride, implantation, atom probe tomography, cathodoluminescence, scanning transmission electron microscopy
- Date published
- 2022-05-14
- Updated at
- 2024-01-05 22:11:22 +0900
Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
- Journal article
- Creator
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;Kosuke Ishikawa (author) (Search by this author)Emi Kano (author) (Search by this author)
https://orcid.org/0000-0001-6134-4980
(unauthenticated)
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Jun Uzuhashi (author) (Search by this author)
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;Kensuke Sumida (author) (Search by this author)Tetsuo Narita (author) (Search by this author)
https://orcid.org/0000-0002-0849-360X
(unauthenticated)
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Masahiro Horita (author) (Search by this author)
https://orcid.org/0000-0003-0008-6732
(unauthenticated)
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;Junya Sahashi (author) (Search by this author)Shun Lu (author) (Search by this author)
https://orcid.org/0000-0002-7342-757X
(unauthenticated)
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Jun Suda (author) (Search by this author)
https://orcid.org/0000-0002-5453-4943
(unauthenticated)
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Tadakatsu Ohkubo (author) (Search by this author)
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Tetsu Kachi (author) (Search by this author)
https://orcid.org/0000-0002-4300-5720
(unauthenticated)
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Nobuyuki Ikarashi (author) (Search by this author)
https://orcid.org/0000-0002-5575-5780
(unauthenticated)
- Keyword
- gallium nitride, atom probe tomography
- Date published
- 2026-06-22
- Updated at
- 2026-06-25 09:46:49 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
- Journal article
- Creator
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;Akira Uedono (author) (Search by this author);Hideki Sakurai (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
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;Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Shoji Ishibashi (author) (Search by this author);Shigefusa F. Chichibu (author) (Search by this author);Michal Bockowski (author) (Search by this author);Jun Suda (author) (Search by this author);Tadakatsu Ohokubo (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author)Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
Tetsu Kachi (author) (Search by this author)
- Keyword
- gallium nitride, vacancy, positron
- Date published
- 2023-03-15
- Updated at
- 2024-01-05 22:12:35 +0900
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
- Journal article
- Creator
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;Emi Kano (author) (Search by this author);Keita Kataoka (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
;Kenta Chokawa (author) (Search by this author);Hideki Sakurai (author) (Search by this author);Akira Uedono (author) (Search by this author);Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author);Ritsuo Otsuki (author) (Search by this author);Koki Kobayashi (author) (Search by this author);Yuta Itoh (author) (Search by this author);Masahiro Nagao (author) (Search by this author)Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
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Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
;Jun Suda (author) (Search by this author);Tetsu Kachi (author) (Search by this author)Nobuyuki Ikarashi (author) (Search by this author)
- Keyword
- gallium nitride, transmission electron microscopy, atom probe tomography
- Date published
- 2022-08-14
- Updated at
- 2024-01-05 22:13:58 +0900
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
- Conference paper
- Creator
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;Akira Uedono (author) (Search by this author);Ryo Tanaka (author) (Search by this author);Shinya Takashima (author) (Search by this author);Katsunori Ueno (author) (Search by this author);Masaharu Edo (author) (Search by this author);Kohei Shima (author) (Search by this author);Shigefusa F. Chichibu (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
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;Shoji Ishibashi (author) (Search by this author);Kacper Sierakowski (author) (Search by this author)Michal Bockowski (author) (Search by this author)
- Keyword
- gallium nitride
- Date published
- 2025-06-04
- Updated at
- 2025-09-17 16:30:20 +0900
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
- Journal article
- Creator
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Akira Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Ryo Tanaka (author) (Search by this author)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
;
Shinya Takashima (author) (Search by this author)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
;
;Katsunori Ueno (author) (Search by this author);Masaharu Edo (author) (Search by this author)Kohei Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
Shigefusa F. Chichibu (author) (Search by this author)
https://orcid.org/0000-0001-9558-1642
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Shoji Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kacper Sierakowski (author) (Search by this author)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Michal Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- gallium nitride
- Date published
- 2024-02-29
- Updated at
- 2025-03-01 12:30:45 +0900
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
- Journal article
- Creator
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Jun Uzuhashi (author) (Search by this author)Research Center for Magnetic and Spintronic Materials/Administrative Office, National Institute for Materials Science
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Jun Chen (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
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;Ryo Tanaka (author) (Search by this author)Fuji Electric Corporation;Shinya Takashima (author) (Search by this author)Fuji Electric Corporation;Masaharu Edo (author) (Search by this author)Fuji Electric CorporationTadakatsu Ohkubo (author) (Search by this author)Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
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Takashi Sekiguchi (author) (Search by this author)University of Tsukuba
- Keyword
- gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
- Date published
- 2024-08-07
- Updated at
- 2024-08-03 08:30:15 +0900