4 records found.
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis
- Journal article
- Creator
-
;Kazuma Torii (author) (Search by this author)a Graduate School of Engineering, Nagoya University;Takuto Kojima (author) (Search by this author);Kentaro Kutsukake (author) (Search by this author);Hiroaki Kudo (author) (Search by this author)Noritaka Usami (author) (Search by this author)
- Keyword
- Silicon, dislocation, twin grain boundary, network analysis
- Date published
- 2025-12-31
- Updated at
- 2025-07-16 16:14:54 +0900
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
- Journal article
- Creator
-
;Yudai Yamaguchi (author) (Search by this author);Yuya Kanitani (author) (Search by this author);Yoshihiro Kudo (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
Shigetaka Tomiya (author) (Search by this author)
- Keyword
- InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy
- Date published
- 2022-09-14
- Updated at
- 2024-01-05 22:12:51 +0900
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Hiroyuki Ando (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, HVPE
- Date published
- 2023-06-01
- Updated at
- 2024-06-23 08:30:11 +0900