33 records found.
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University - Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, HCl gas etching
- Date published
- 2023-06-01
- Updated at
- 2024-06-15 08:30:13 +0900
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
- Dataset
- Collection
- Thermophysical Property Original Datasets
- Creator
-
;Takehiko Ishikawa (depositor) (Search by this author)Japan Aerospace Exploration AgencyMasashi Ishii (editor) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Ceramic, Density, ISS-ELF, Electrostatic Levitation, collection - Thermophys Datasets
- Date published
- Updated at
- 2024-03-30 18:40:44 +0900
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH
- Date published
- 2026-02-01
- Updated at
- 2026-02-25 12:30:03 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HCl gas etching, air bridge
- Date published
- 2025-05-01
- Updated at
- 2025-05-07 12:30:22 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, wet etching, TMAH
- Date published
- 2026-12-31
- Updated at
- 2026-06-11 15:11:01 +0900
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (011), AFM, TEM
- Date published
- 2026-07-15
- Updated at
- 2026-07-09 10:29:39 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, wet etching, MEMS
- Date published
- 2025-11-01
- Updated at
- 2025-11-27 08:30:13 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, selective area growth
- Date published
- 2022-07-01
- Updated at
- 2024-01-05 22:13:27 +0900