ファイル種別: application/pdf キーワード: gallium nitride

8 件のレコードが見つかりました。

Uedono-et-al_IWJT2025_Proceedings.pdf
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
プロシーディングス論文
著者
Akira Uedono (author) (この著者で検索)
;
Ryo Tanaka (author) (この著者で検索)
;
Shinya Takashima (author) (この著者で検索)
;
Katsunori Ueno (author) (この著者で検索)
;
Masaharu Edo (author) (この著者で検索)
;
Kohei Shima (author) (この著者で検索)
;
Shigefusa F. Chichibu (author) (この著者で検索)
; ORCID SAMURAI ; ORCID SAMURAI ;
Shoji Ishibashi (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
キーワード
gallium nitride
刊行年月日
2025-06-04
更新時刻
2025-09-17 16:30:20 +0900

Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
ジャーナル論文
著者
Emi Kano (author) (この著者で検索)
ORCID ;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Koki Kobayashi (author) (この著者で検索)
;
Kosuke Ishikawa (author) (この著者で検索)
;
Kyosuke Sawabe (author) (この著者で検索)
;
Tetsuo Narita (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Tetsu Kachi (author) (この著者で検索)
;
Nobuyuki Ikarashi (author) (この著者で検索)
ORCID
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy
刊行年月日
2024-04-22
更新時刻
2024-09-20 16:30:27 +0900

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
ジャーナル論文
著者
Jun Uzuhashi (author) (この著者で検索)
National Institute for Materials Science Research Center for Magnetic and Spintronic Materials/Administrative Office
ORCID SAMURAI ;
Jun Chen (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group
ORCID SAMURAI ;
Ryo Tanaka (author) (この著者で検索)
Fuji Electric Corporation
;
Shinya Takashima (author) (この著者で検索)
Fuji Electric Corporation
;
Masaharu Edo (author) (この著者で検索)
Fuji Electric Corporation
;
Tadakatsu Ohkubo (author) (この著者で検索)
National Institute for Materials Science Research Center for Magnetic and Spintronic Materials
ORCID SAMURAI ;
Takashi Sekiguchi (author) (この著者で検索)
University of Tsukuba
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
刊行年月日
2024-08-07
更新時刻
2024-08-03 08:30:15 +0900

Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
ジャーナル論文
著者
Akira Uedono (author) (この著者で検索)
ORCID ;
Ryo Tanaka (author) (この著者で検索)
ORCID ;
Shinya Takashima (author) (この著者で検索)
ORCID ;
Katsunori Ueno (author) (この著者で検索)
;
Masaharu Edo (author) (この著者で検索)
;
Kohei Shima (author) (この著者で検索)
ORCID ;
Shigefusa F. Chichibu (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Shoji Ishibashi (author) (この著者で検索)
ORCID ;
Kacper Sierakowski (author) (この著者で検索)
ORCID ;
Michal Bockowski (author) (この著者で検索)
ORCID
キーワード
gallium nitride
刊行年月日
2024-02-29
更新時刻
2025-03-01 12:30:45 +0900

Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
プロシーディングス論文
著者
Ryo Tanaka (author) (この著者で検索)
Fuji Electric Co., Ltd.
;
Shinya Takashima (author) (この著者で検索)
Fuji Electric Co., Ltd.
;
Katsunori Ueno (author) (この著者で検索)
Fuji Electric Co., Ltd.
;
Masahiro Horita (author) (この著者で検索)
Nagoya Univ.
;
Jun Suda (author) (この著者で検索)
Nagoya Univ.
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Masaharu Edo (author) (この著者で検索)
Fuji Electric Co., Ltd.
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy
刊行年月日
2023-06-08
更新時刻
2024-04-19 12:30:23 +0900

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation.pdf
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
ジャーナル論文
著者
Emi Kano (author) (この著者で検索)
;
Keita Kataoka (author) (この著者で検索)
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Kenta Chokawa (author) (この著者で検索)
;
Hideki Sakurai (author) (この著者で検索)
;
Akira Uedono (author) (この著者で検索)
;
Tetsuo Narita (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
;
Ritsuo Otsuki (author) (この著者で検索)
;
Koki Kobayashi (author) (この著者で検索)
;
Yuta Itoh (author) (この著者で検索)
;
Masahiro Nagao (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Kazuhiro Hono (author) (この著者で検索)
ORCID SAMURAI ;
Jun Suda (author) (この著者で検索)
;
Tetsu Kachi (author) (この著者で検索)
;
Nobuyuki Ikarashi (author) (この著者で検索)
キーワード
gallium nitride, transmission electron microscopy, atom probe tomography
刊行年月日
2022-08-14
更新時刻
2024-01-05 22:13:58 +0900

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
ジャーナル論文
著者
Akira Uedono (author) (この著者で検索)
;
Hideki Sakurai (author) (この著者で検索)
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Tetsuo Narita (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Shoji Ishibashi (author) (この著者で検索)
;
Shigefusa F. Chichibu (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
;
Jun Suda (author) (この著者で検索)
;
Tadakatsu Ohokubo (author) (この著者で検索)
;
Nobuyuki Ikarashi (author) (この著者で検索)
;
Kazuhiro Hono (author) (この著者で検索)
ORCID SAMURAI ;
Tetsu Kachi (author) (この著者で検索)
キーワード
gallium nitride, vacancy, positron
刊行年月日
2023-03-15
更新時刻
2024-01-05 22:12:35 +0900

Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient gas during annealing.pdf
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
ジャーナル論文
著者
Ashutosh Kumar (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Martin Berg (author) (この著者で検索)
;
Qin Wang (author) (この著者で検索)
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Michael Salter (author) (この著者で検索)
;
Peter Ramvall (author) (この著者で検索)
キーワード
gallium nitride, scanning transmission electron microscopy, semiconductor, activation
刊行年月日
2023-07-21
更新時刻
2024-01-05 22:12:15 +0900