Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
- ジャーナル論文
- 著者
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Lewis T. Penman (author) (この著者で検索)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
;
;Zak M. Johnston (author) (この著者で検索)Paul R. Edwards (author) (この著者で検索)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
;
;Clifford McAleese (author) (この著者で検索)Piero Mazzolini (author) (この著者で検索)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
;
Matteo Bosi (author) (この著者で検索)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
;
Luca Seravalli (author) (この著者で検索)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
;
;Roberto Fornari (author) (この著者で検索)Robert W. Martin (author) (この著者で検索)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C.‐P. Massabuau (author) (この著者で検索)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- キーワード
- Ga2O3
- 刊行年月日
- 2025-02-12
- 更新時刻
- 2025-08-18 16:30:52 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)
;
Takashi Shinohe (author) (この著者で検索)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- キーワード
- Ga2O3, dislocation, ELO, HVPE
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-04-23 12:30:12 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, crystallographic etching, (011)
- 刊行年月日
- 2025-01-01
- 更新時刻
- 2026-01-24 15:43:35 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, HCl gas etching, air bridge
- 刊行年月日
- 2025-05-01
- 更新時刻
- 2025-05-07 12:30:22 +0900
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- ジャーナル論文
- 著者
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;Qihao Zhang (author) (この著者で検索)Jiangwei Liu (author) (この著者で検索)National Institute for Materials Science
;
;Chunming Tu (author) (この著者で検索);Dongyuan Zhai (author) (この著者で検索);Min He (author) (この著者で検索)Jiwu Lu (author) (この著者で検索)
- キーワード
- Ga2O3, Transistor
- 刊行年月日
- 2023-01-03
- 更新時刻
- 2025-01-04 16:30:50 +0900