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論文・データセット
コレクション
Research Highlights(3)
資源タイプ
論文(25)
雑誌(3)
キーワード
hexagonal boron nitride (28)
graphene (3)
diamond (2)
Ag(111) (1)
Atomically-precise nanopores (1)
Charge transport (1)
Crossbar array (1)
Defect centers (1)
Electrochemistry (1)
Electrolyte gating (1)
(more)
ライセンス
Creative Commons BY Attribution 4.0 International (18)
In Copyright (6)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (2)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (1)
ファイル種別
application/pdf (28)
ファイル種別: application/pdf
キーワード: hexagonal boron nitride
全ての絞り込みを解除
28 件のレコードが見つかりました。
Optical control of multiple resistance levels in graphene for memristic applications
論文
著者
Harsimran Kaur Mann ; Mainak Mondal ; Vivek Sah ;
Kenji Watanabe
;
Takashi Taniguchi
;
Akshay Singh
;
Aveek Bid
キーワード
Neuromorphic computing
,
memristors
,
hexagonal boron nitride
刊行年月日
2024-10-29
更新時刻
2025-02-06 12:30:34 +0900
Charge Transfer-Induced Weakening of Vibronic Coupling for Single Terrylene Molecules Adsorbed onto Hexagonal Boron Nitride
論文
著者
Titus de Haas
;
Robert Smit
;
Arash Tebyani
;
Semonti Bhattacharyya
;
Kenji Watanabe
;
Takashi Taniguchi
;
Francesco Buda
;
Michel Orrit
キーワード
Fluorescence spectra
,
terrylene molecules
,
hexagonal boron nitride
刊行年月日
2025-01-09
更新時刻
2025-02-05 12:30:08 +0900
Systematic characterization of nanoscale
h
-BN quantum sensor spots created by helium-ion microscopy
論文
著者
Hao Gu ;
Moeta Tsukamoto
;
Yuki Nakamura
;
Shu Nakaharai
;
Takuya Iwasaki
;
Kenji Watanabe
;
Takashi Taniguchi
; Shinichi Ogawa ; Yukinori Morita ;
Kento Sasaki
;
Kensuke Kobayashi
キーワード
quantum sensor
,
hexagonal boron nitride
,
helium ion microscopy
刊行年月日
2024-11-12
更新時刻
2025-01-09 16:30:55 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
論文
著者
Yosuke Sasama
;
Takuya Iwasaki
;
Mohammad Monish
;
Kenji Watanabe
;
Takashi Taniguchi
;
Yamaguchi Takahide
キーワード
Hydrogen-terminated diamond
,
Field-effect transistors
,
hexagonal boron nitride
,
Self-aligned gate electrode
刊行年月日
2024-08-26
更新時刻
2024-09-12 16:30:45 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
論文
著者
Takuya Iwasaki
; Yoshifumi Morita ;
Kenji Watanabe
;
Takashi Taniguchi
キーワード
bilayer graphene
,
hexagonal boron nitride
,
heterostructure
,
valley Hall effect
刊行年月日
2024-02-08
更新時刻
2025-01-10 16:31:45 +0900
[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA)
キーワード
diamond
,
field-effect transistor
,
hexagonal boron nitride
,
mobility
,
hydrogen-terminated
,
wide bandgap
,
hBN
,
graphite
,
hBN/h-BN
刊行年月日
2022-07-29
更新時刻
2023-12-26 21:47:16 +0900
[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA)
キーワード
density functional theory
,
germanene
,
graphene
,
hexagonal boron nitride
,
Raman spectroscopy
,
van der Waals materials
,
Ag(111)
,
silicene
刊行年月日
2021-07-15
更新時刻
2023-12-26 21:46:24 +0900
[Research Highlights Vol.61] First Fabrication of fBBLG/hBN Superlattices
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA)
キーワード
two-dimensional material
,
van der Waals heterostructure
,
graphene
,
hexagonal boron nitride
,
moiré superlattice
,
transport property
刊行年月日
2020-08-26
更新時刻
2023-12-26 21:47:57 +0900
キーワード
hexagonal boron nitride
(28)
graphene
(3)
diamond
(2)
Ag(111)
(1)
Atomically-precise nanopores
(1)
Charge transport
(1)
Crossbar array
(1)
Defect centers
(1)
Electrochemistry
(1)
Electrolyte gating
(1)
Epitaxial growth
(1)
Field-effect transistors
(1)
Fluorescence spectra
(1)
Hydrogen-terminated diamond
(1)
Nanostructure
(1)
Neuromorphic computing
(1)
Phthalocyanine
(1)
Polar crystals
(1)
Quasiparticles
(1)
Raman spectroscopy
(1)
Reconfigurable field effect transistor
(1)
Self-aligned gate electrode
(1)
Single photon emitters
(1)
Single-layer graphene
(1)
Thermal conductivity
(1)
Transition metal dichalcogenides
(1)
bilayer graphene
(1)
carrier density
(1)
density functional theory
(1)
dielectric strength
(1)
dynamic nuclear polarization
(1)
electroluminescence
(1)
excitons
(1)
field-effect transistor
(1)
field-effect transistors
(1)
germanene
(1)
graphite
(1)
hBN
(1)
hBN/h-BN
(1)
heat dissipation
(1)
helium ion microscopy
(1)
heterostructure
(1)
hydrogen-terminated
(1)
many-body effects
(1)
mechanical stress
(1)
memory cell
(1)
memristors
(1)
mobility
(1)
moiré superlattice
(1)
molecular beam epitaxy
(1)
optical nonlinearities
(1)
optical phonon excitation
(1)
optically detected magnetic resonance
(1)
organic semiconducting crystals
(1)
photoluminescence
(1)
quantum emitters
(1)
quantum sensor
(1)
quantum wells
(1)
silicene
(1)
silicon nanowire
(1)
single-photon sources
(1)
terrylene molecules
(1)
transmission electron microscopy
(1)
transport property
(1)
two-dimensional material
(1)
vacancy
(1)
vacancy-related emitters
(1)
valley Hall effect
(1)
van der Waals heterostructure
(1)
van der Waals materials
(1)
wide bandgap
(1)
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