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Optimum asymmetry for nanofabricated refractometric sensors at quasi-bound states in t...
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with ...
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topolog...
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
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27
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HVPE
4
Ga2O3
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gallium nitride
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α-Ga2O3
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ELO
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
14
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12
Material/Specimen
nitrides
1
Date
2018
2
Author
Yuichi Oshima
6
Jun Uzuhashi
4
Tadakatsu Ohkubo
4
Ashutosh Kumar
2
Elaheh Ahmadi
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Ministry of Education, Culture, Sports, Science and Technology
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Cabinet Office, Government of Japan
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Core Research for Evolutional Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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Applied Physics Letters
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APL Materials
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The Journal of Chemical Physics
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