Index Catalog // MDR

1. Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

Description/Abstract:: We fabricated terahertz (THz) wave emitters from high-temperature superconductor Bi2 Sr2 CaCu2 O8þδ (Bi2212) single crystals annealed und...
Keyword:: Josephson junction, annealing condition, high-temperature superconductor, and terahertz emitter
Resource Type:: Article
Author:: S. Nakagawa, T. Shizu, T. Imai, M. Nakayama, J. Kim, H. Minami, K. Kadowaki, M. Tsujimoto, H. Nakao, H. Eisaki, S. Ishida, T. Mochiku, Y. Hasegawa, and T. Kashiwagi
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 26/04/2024

2. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>

Description/Abstract:: We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:: ELO, HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

3. Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:: HVPE, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

4. Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

Description/Abstract:: ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:: HVPE and ScN
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

5. Materials issues and devices of α- and β-Ga2O3

Description/Abstract:: パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:: Ga2O3, epitaxy, and power device
Resource Type:: Article
Author:: Elaheh Ahmadi and Yuichi Oshima
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 29/01/2024
Date Modified:: 01/02/2024

6. Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique

Description/Abstract:: Suppression of 1/f noise in tunnel magnetoresistance (TMR) sensors is a central issue in the realization of magnetic field sensors with u...
Keyword:: 1/f noise, magnetic sensor, noise, and tunnel magnetoresistance
Resource Type:: Article
Author:: Tomoya Nakatani, Hirofumi Suto, Prabhanjan D. Kulkarni, Hitoshi Iwasaki, and Yuya Sakuraba
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 23/01/2024
Date Modified:: 16/02/2024

7. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Description/Abstract:: We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: Article
Author:: Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

8. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Description/Abstract:: Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:: activation, gallium nitride, scanning transmission electron microscopy, and semiconductor
Resource Type:: Article
Author:: Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, and Peter Ramvall
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

9. Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles

Description/Abstract:: Nanomechanical sensors and their arrays have been attracting significant attention for detecting, distinguishing, and identifying target ...
Keyword:: nanomechanical sensors and sorption kinetics
Resource Type:: Article
Author:: Kosuke Minami, Kota Shiba, and Genki Yoshikawa
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 25/07/2023

10. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

1. Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

2. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>

3. Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

4. Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

5. Materials issues and devices of α- and β-Ga2O3

6. Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique

7. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

8. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

9. Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles

10. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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1. Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

2. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along &lt;-12-10&gt;

3. Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

4. Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

5. Materials issues and devices of α- and β-Ga2O3

6. Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique

7. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

8. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

9. Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles

10. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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2. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>