Index Catalog // MDR

Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV range

Description/Abstract:: We report calculations of electron inelastic mean free paths (IMFPs) of 50–2000 eV electrons for a group of 14 organic compounds: 26-n-pa...
Keyword:: IMFP, IMFP predictive formula, Penn algorithm, TPP-2M, electron inelastic mean free path, and organic compounds
Resource Type:: Article
Author:: Shigeo Tanuma
Journal:: Surface and Interface Analysis
Date Uploaded:: 29/05/2023
Date Modified:: 30/05/2023

Electron Inelastic Scattering in Surface Analysis

Description/Abstract:: This paper discusses the recent progress in electron inelastic mean free paths (IMFPs) calculations with the dielectric response function...
Keyword:: IMFP, dielectric function model, energy loss function, inelastic mean free path, and modified Bethe equation
Resource Type:: Article
Author:: Shigeo Tanuma
Journal:: e-Journal of Surface Science and Nanotechnology
Date Uploaded:: 13/05/2023

Machine learning approach for the prediction of electron inelastic mean free paths

Description/Abstract:: The prediction of electron inelastic mean free paths (IMFPs) from simple material parameters is a challenging problem in studies using el...
Keyword:: inelastic mean free path and machine learning
Resource Type:: Article
Author:: Xun Liu, Lihao Yang, Zhufeng Hou, Bo Da, Kenji Nagata, Hideki Yoshikawa, Shigeo Tanuma, Yang Sun, and Zejun Ding
Date Uploaded:: 11/04/2023

Observation of Plasmon Energy Gain for Emitted Secondary Electron in Vacuo

Description/Abstract:: Plasmon gain by core-level electrons or elastic electrons observed in past studies seems to be of no practical value in material characte...
Keyword:: Plasmon Energy Gain and Secondary Electron
Resource Type:: Article
Author:: Bo Da, Jiangwei Liu, Yoshitomo Harada, Nguyen T. Cuong, Kazuhito Tsukagoshi, Jin Hu, Lihao Yang, Zejun Ding, Hideki Yoshikawa, and Shigeo Tanuma
Date Uploaded:: 11/04/2023
Date Modified:: 11/04/2023

Measurement of the Low-Energy Electron Inelastic Mean Free Path in Monolayer Graphene

Description/Abstract:: Measuring the electron-transport properties of substrate-supported nanomaterials with the traditional two-point comparison method is diff...
Keyword:: four-point probe technique, inelastic mean free path, and monolayer graphene
Resource Type:: Article
Author:: Bo Da, Yang Sun, Zhufeng Hou, Jiangwei Liu, Nguyen Thanh Cuong, Kazuhito Tsukagoshi, Hideki Yoshikawa, Shigeo Tanuma, Jin Hu, Zhaoshun Gao, and Zejun Ding
Date Uploaded:: 04/04/2023
Date Modified:: 05/04/2023

Virtual substrate method for nanomaterials characterization

Description/Abstract:: Characterization techniques available for bulk or thin-film solid-state materials have been extended to substrate-supported nanomaterials...
Keyword:: Virtual substrate method
Resource Type:: Article
Author:: Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, and Zejun Ding
Date Uploaded:: 28/02/2023

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Description/Abstract:: We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAsP Multilayers, Zalar Rotation Method, and Sample Cooling Method
Material/Specimen:: InP/GaInAsP Multilayers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Tanuma, Shigeo, Nagasawa, Yuji, and Ikeo, Nobuyuki
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 09/09/2021
Date Modified:: 09/09/2021

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

Description/Abstract:: We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 08/09/2021
Date Modified:: 08/09/2021

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

Description/Abstract:: AES深さ方向分析の標準化を進めるために，InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った．参加した２３機関の装置は３社に分類され，その仕様が異なるため，測定条件は電子線およびイオンの加速電圧を3kVに固定して，その他の条件は各機関に一任...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAs Specimen, and Round Robin Test
Material/Specimen:: InP/GaInAs Multilayer
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 29/07/2021
Date Modified:: 02/08/2021

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV range

Electron Inelastic Scattering in Surface Analysis

Machine learning approach for the prediction of electron inelastic mean free paths

Observation of Plasmon Energy Gain for Emitted Secondary Electron in Vacuo

Measurement of the Low-Energy Electron Inelastic Mean Free Path in Monolayer Graphene

Virtual substrate method for nanomaterials characterization

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

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