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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
Permanent-magnet-based transverse thermoelectric generator with high fill factor drive...
Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel mag...
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensio...
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepa...
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32
Keyword
HVPE
4
Ga2O3
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gallium nitride
3
α-Ga2O3
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ELO
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English
32
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
17
In Copyright
14
Material/Specimen
nitrides
1
Date
2018
2
Author
Yuichi Oshima
6
Tadakatsu Ohkubo
5
Jun Uzuhashi
4
Ken-ichi Uchida
4
Ashutosh Kumar
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http://rightsstatements.org/vocab/InC/1.0/
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Japan Society for the Promotion of Science
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Core Research for Evolutional Science and Technology
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Exploratory Research for Advanced Technology
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JST
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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APL Materials
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Applied Physics Letters
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The Journal of Chemical Physics
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