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Yuichi Oshima
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Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Ha...
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral o...
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-...
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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18
Keyword
HVPE
8
α-Ga2O3
8
ELO
4
Ga2O3
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dislocation
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Creative Commons BY Attribution 4.0 International
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Author
Yuichi Oshima
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18
Takashi Shinohe
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Takayoshi Oshima
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Elaheh Ahmadi
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Katsuaki Kawara
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The Murata Science Foundation
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Applied Physics Express
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS EXPRESS
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APPLIED PHYSICS LETTERS
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JAPANESE JOURNAL OF APPLIED PHYSICS
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