Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

DOI

• https://doi.org/10.48505/nims.4360

First published at

• https://doi.org/10.1088/1361-6641/aa9c4d

Creator

• Name

  Yuichi Oshima

  ORCID

  https://orcid.org/0000-0001-8293-4891

  Organization

  National Institute for Materials Science

  Role

  author

  Name

  Elaheh Ahmadi

  ORCID

  https://orcid.org/0000-0002-8330-9366

  Role

  author

  Name

  Stephen Kaun

  Role

  author

  Name

  Feng Wu

  Role

  author

  Name

  James S Speck

  Role

  author

Keyword

• MBE
• β-Ga2O3

Resource type

• Article

Publisher

• IOP Publishing

Date published

• 22/11/2017

Rights statement

• In Copyright

License description

• © 2017 IOP Publishing Ltd
  This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa9c4d.

Journal

• Title

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY

  ISSN

  02681242

  Volume

  33

  Issue

  1

  Start page

  15013

  End page

  15013

Manuscript type

• Accepted manuscript

Language

• English

Last modified

• 23/01/2024

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