Publication
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
MDR Open Deposited
We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) oriented b-Ga2O3 layers were successfully grown using GaCl and O2 as source gases. The growth rate monotonically increased with increasing the partial pressures of the source gases, reaching over 250 um/h. By the use of off-angled substrates and thick layer overgrowth, almost single-oriented heteroepitaxial growth was achieved.
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- 28/10/2014
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- © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.
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- Accepted manuscript
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- 23/01/2024
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HVPE-Ga2O3(oshima)final.pdf | 639 KB | MDR Open |
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