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JOURNAL OF APPLIED PHYSICS
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Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Description/Abstract:
For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:
GaN
Resource Type:
Article
Author:
Shigefusa F. Chichibu
,
Kohei Shima
,
Akira Uedono
,
Shoji Ishibashi
,
Hiroko Iguchi
,
Tetsuo Narita
,
Keita Kataoka
,
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masaharu Edo
,
Hirotaka Watanabe
,
Atsushi Tanaka
,
Yoshio Honda
,
Jun Suda
,
Hiroshi Amano
,
Tetsu Kachi
,
Toshihide Nabatame
,
Yoshihiro Irokawa
, and
Yasuo Koide
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
09/05/2024
Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals
Description/Abstract:
We fabricated terahertz (THz) wave emitters from high-temperature superconductor Bi2 Sr2 CaCu2 O8þδ (Bi2212) single crystals annealed und...
Keyword:
Josephson junction
,
annealing condition
,
high-temperature superconductor
, and
terahertz emitter
Resource Type:
Article
Author:
S. Nakagawa
,
T. Shizu
,
T. Imai
,
M. Nakayama
,
J. Kim
,
H. Minami
,
K. Kadowaki
,
M. Tsujimoto
,
H. Nakao
,
H. Eisaki
,
S. Ishida
,
T. Mochiku
,
Y. Hasegawa
, and
T. Kashiwagi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
26/04/2024
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:
HVPE
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
,
Yoshitaka Matsushita
,
Satoshi Yamamoto
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Description/Abstract:
ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:
HVPE
and
ScN
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique
Description/Abstract:
Suppression of 1/f noise in tunnel magnetoresistance (TMR) sensors is a central issue in the realization of magnetic field sensors with u...
Keyword:
1/f noise
,
magnetic sensor
,
noise
, and
tunnel magnetoresistance
Resource Type:
Article
Author:
Tomoya Nakatani
,
Hirofumi Suto
,
Prabhanjan D. Kulkarni
,
Hitoshi Iwasaki
, and
Yuya Sakuraba
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
23/01/2024
Date Modified:
16/02/2024
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Description/Abstract:
We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Emi Kano
,
Keita Kataoka
,
Jun Uzuhashi
,
Kenta Chokawa
,
Hideki Sakurai
,
Akira Uedono
,
Tetsuo Narita
,
Kacper Sierakowski
,
Michal Bockowski
,
Ritsuo Otsuki
,
Koki Kobayashi
,
Yuta Itoh
,
Masahiro Nagao
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
,
Jun Suda
,
Tetsu Kachi
, and
Nobuyuki Ikarashi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Description/Abstract:
Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:
activation
,
gallium nitride
,
scanning transmission electron microscopy
, and
semiconductor
Resource Type:
Article
Author:
Ashutosh Kumar
,
Martin Berg
,
Qin Wang
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Michael Salter
, and
Peter Ramvall
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles
Description/Abstract:
Nanomechanical sensors and their arrays have been attracting significant attention for detecting, distinguishing, and identifying target ...
Keyword:
nanomechanical sensors
and
sorption kinetics
Resource Type:
Article
Author:
Kosuke Minami
,
Kota Shiba
, and
Genki Yoshikawa
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
25/07/2023
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HVPE
3
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11
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10
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11
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11
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6
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5
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Yuichi Oshima
4
Jun Uzuhashi
3
Tadakatsu Ohkubo
3
Tetsu Kachi
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JOURNAL OF APPLIED PHYSICS
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