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Yuichi Oshima
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Ha...
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HVPE
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α-Ga2O3
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ELO
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Ga2O3
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dislocation
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Creative Commons BY Attribution 4.0 International
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Author
Yuichi Oshima
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Takashi Shinohe
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Takayoshi Oshima
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Elaheh Ahmadi
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Katsuaki Kawara
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The Murata Science Foundation
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JOURNAL OF APPLIED PHYSICS
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Applied Physics Express
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APPLIED PHYSICS EXPRESS
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APPLIED PHYSICS LETTERS
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JAPANESE JOURNAL OF APPLIED PHYSICS
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