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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers ...

Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...

Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel mag...

Materials issues and devices of α- and β-Ga2O3

Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along &lt;-12-10...

Study of device characteristics of intrinsic Josephson junction terahertz emitters rel...