Skip to Content
Toggle navigation
Home
About
Help
Contact
Login
Search MDR
Go
Search Constraints
Start Over
Filtering by:
Author
Yuichi Oshima
Remove constraint Author: Yuichi Oshima
Rights Statement Sim
In Copyright
Remove constraint Rights Statement Sim: In Copyright
« Previous |
1
-
10
of
12
|
Next »
Sort by relevance
relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲
Number of results to display per page
10 per page
10
per page
20
per page
50
per page
100
per page
View results as:
List
Gallery
Masonry
Slideshow
Search Results
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
« Previous
Next »
1
2
Toggle facets
Limit your search
Type of work
Publication
12
Keyword
HVPE
7
α-Ga2O3
6
ELO
4
dislocation
2
epitaxy
2
more
Keywords
»
Language
English
12
Publisher
IOP Publishing
7
AIP Publishing
5
Resource type
Article
12
Visibility
open
12
Rights Statement Sim
In Copyright
[remove]
12
Author
Yuichi Oshima
[remove]
12
Takashi Shinohe
5
Elaheh Ahmadi
4
Katsuaki Kawara
4
Encarnación G. Víllora
3
more
Authors
»
Journal
JOURNAL OF APPLIED PHYSICS
4
APPLIED PHYSICS EXPRESS
2
JAPANESE JOURNAL OF APPLIED PHYSICS
2
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2
APPLIED PHYSICS LETTERS
1
more
Journals
»