キーワード: GaN
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20 件のレコードが見つかりました。 1件目から10件目まで表示します。

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dfac008.pdf
Classification for transmission electron microscope images from different amorphous states using persistent homology
ジャーナル論文
著者
Fumihiko Uesugi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Masashi Ishii (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
TEM image simulation, GaN, persistent homology, Amorphous structure
刊行年月日
2022-06-06
更新時刻
2024-07-04 16:32:11 +0900
Irokawa_2026_ECS_J._Solid_State_Sci._Technol._15_055002.pdf
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
ジャーナル論文
著者
ORCID SAMURAI ;
Mamoru Usami (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
キーワード
GaN
刊行年月日
2026-05-01
更新時刻
2026-05-13 10:14:20 +0900
1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
ジャーナル論文
著者
Masahiro Hara (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Tsunenobu Kimoto (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
キーワード
GaN
刊行年月日
2025-05-07
更新時刻
2025-05-08 12:30:16 +0900
InGaN_JAP_manuscript_251203_09_04_mark.docx
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
ジャーナル論文
著者
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Takanobu Hiroto (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Takaaki Mano (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yuri Itokazu (author) (この著者で検索)
;
Masafumi Jo (author) (この著者で検索)
キーワード
MOVPE, GaN, InN, InGaN, XRD, Superlattice
刊行年月日
2026-03-21
更新時刻
2026-04-03 09:31:08 +0900
Exploring the Effect of Temperature and Interface Atom Type on Heat Transport through the GaNdiamond Interfaces using Machine Learning Potential_Zhanpeng Sun-Prof. Liao.docx
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
ジャーナル論文
著者
Zhanpeng Sun (author) (この著者で検索)
;
Yunfei Song (author) (この著者で検索)
;
Zijun Qi (author) (この著者で検索)
;
Xiang Sun (author) (この著者で検索)
;
Meiyong Liao (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Rui Li (author) (この著者で検索)
;
Qijun Wang (author) (この著者で検索)
ORCID ;
Lijie Li (author) (この著者で検索)
;
Gai Wu (author) (この著者で検索)
ORCID ;
Wei Shen (author) (この著者で検索)
;
Sheng Liu (author) (この著者で検索)
キーワード
thermal conductivity, GaN, Diamond
刊行年月日
2025-01-16
更新時刻
2025-04-22 12:30:10 +0900
GaN_O2.jpg
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
データセット
著者
SUMIYA, Masatomo (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
刊行年月日
2020-11-19
更新時刻
2024-01-05 22:13:22 +0900
APL26-AR-ICNS2026-02280.pdf
Stable structures of (VGaVN) n defects in bulk GaN
ジャーナル論文
著者
Hiroyuki Ishihara (author) (この著者で検索)
ORCID ;
Masato Oda (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
GaN, First-principles calculations, Large-scale DFT, Vacancy, Defects
刊行年月日
2026-08-24
更新時刻
2026-08-26 10:56:41 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
manuscript-R1.docx
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
ジャーナル論文
著者
Kongping Wu (author) (この著者で検索)
ORCID ;
Renxiang Cheng (author) (この著者で検索)
;
Leng Zhang (author) (この著者で検索)
;
Wenxiu Wang (author) (この著者で検索)
;
Fangzhen Li (author) (この著者で検索)
; ORCID SAMURAI
キーワード
diamond, heat spreader, GaN, calculation
刊行年月日
2024-12-19
更新時刻
2025-04-22 08:30:20 +0900
[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)
National Institute for Materials Science
キーワード
GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
刊行年月日
2021-07-13
更新時刻
2023-12-26 21:38:08 +0900
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