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論文・データセット
コレクション
MDR lattice thermal conductivity calculation database(2)
MDR XAFS DB(1)
資源タイプ
ジャーナル論文(22)
データセット(3)
書籍(1)
キーワード
Ga2O3 (26)
HVPE (5)
HCl gas etching (3)
Lattice thermal conductivity (2)
TMAH (2)
dislocation (2)
(-102) (1)
(−112) (1)
Aichi SR (1)
BL5S1 (1)
(more)
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (4)
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image/png (3)
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text/tab-separated-values (1)
試料の化学組成
酸化ガリウム(III) (1)
解析分野
分光法 (1)
計測法
X線吸収分光法 (1)
試料種別
酸化物 (1)
試料の構造的特徴
局所構造 (1)
キーワード: Ga2O3
全ての絞り込みを解除
26 件のレコードが見つかりました。
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
ジャーナル論文
著者
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Takashi Shinohe
(author) (
この著者で検索
)
FLOSFIA INC.
Takashi Shinohe
キーワード
Ga2O3
,
dislocation
,
HVPE
,
ELO
刊行年月日
2025-05-19
更新時刻
2025-05-21 16:30:09 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
HCl gas etching
刊行年月日
2023-06-01
更新時刻
2024-06-15 08:30:13 +0900
Plasma-free anisotropic selective-area etching of β-Ga
2
O
3
using forming gas under atmospheric pressure
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Rie Togashi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
Rie Togashi
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
forming gas
,
anisotropic etching
,
plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
XAFS spectrum of Gallium(III) Oxide
データセット
コレクション
MDR XAFS DB
著者
Masashi Ishii
(editor) (
この著者で検索
)
https://orcid.org/0000-0003-0357-2832
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Masashi Ishii
;
Aichi SR
(author) (
この著者で検索
)
Aichi Synchrotron Radiation Center
Aichi SR
キーワード
Gallium(III) Oxide
,
Ga2O3
,
Ga K-edge
,
Oxide
,
Si(111)
,
BL5S1
,
Aichi SR
,
XAFS
,
collection - MDR XAFS DB
刊行年月日
更新時刻
2025-05-02 21:35:19 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
データセット
コレクション
MDR lattice thermal conductivity calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science Center for Basic Research on Materials
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Lattice thermal conductivity
,
Ga2O3
刊行年月日
更新時刻
2026-01-24 14:36:41 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science Research Center for Electronic and Optical Materials
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
(-102)
,
selective area growth
,
selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
ジャーナル論文
著者
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
キーワード
Ga2O3
,
etching
,
HCl
刊行年月日
2023-04-17
更新時刻
2024-05-29 08:30:12 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
データセット
コレクション
MDR lattice thermal conductivity calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science Center for Basic Research on Materials
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Lattice thermal conductivity
,
Ga2O3
刊行年月日
更新時刻
2026-01-24 12:32:36 +0900
Halide vapor phase epitaxy of a thick
c
-plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
ジャーナル論文
著者
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Takayoshi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8550-9735
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
;
Shiyu Xiao
(author) (
この著者で検索
)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
Shiyu Xiao
;
Kazuto Murakami
(author) (
この著者で検索
)
Kazuto Murakami
;
Katsuhiro Imai
(author) (
この著者で検索
)
Katsuhiro Imai
;
Takahiro Tomita
(author) (
この著者で検索
)
Takahiro Tomita
キーワード
Ga2O3
,
HVPE
,
Cr2O3
刊行年月日
2026-02-21
更新時刻
2026-02-18 16:30:15 +0900
Luminescence properties of dislocations in α-Ga
2
O
3
ジャーナル論文
著者
Mugove Maruzane
(author) (
この著者で検索
)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
Mugove Maruzane
;
Yuichi Oshima
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Olha Makydonska
(author) (
この著者で検索
)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
Olha Makydonska
;
Paul R Edwards
(author) (
この著者で検索
)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
Paul R Edwards
;
Robert W Martin
(author) (
この著者で検索
)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
Robert W Martin
;
Fabien C-P Massabuau
(author) (
この著者で検索
)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
Fabien C-P Massabuau
キーワード
Ga2O3
,
dislocation
刊行年月日
2025-01-20
更新時刻
2024-11-13 08:31:40 +0900
キーワード
Ga2O3
(26)
HVPE
(5)
HCl gas etching
(3)
Lattice thermal conductivity
(2)
TMAH
(2)
dislocation
(2)
(-102)
(1)
(−112)
(1)
Aichi SR
(1)
BL5S1
(1)
Cr2O3
(1)
Delafossite
(1)
ELO
(1)
Ga K-edge
(1)
Gallium(III) Oxide
(1)
HCl
(1)
MEMS
(1)
NiO
(1)
Oxide
(1)
Power devices
(1)
Schottky
(1)
Si(111)
(1)
Superlattice
(1)
Thin film
(1)
Transistor
(1)
Wet etching
(1)
XAFS
(1)
air bridge
(1)
anisotropic etching
(1)
b-Ga2O3
(1)
collection - MDR XAFS DB
(1)
dopant
(1)
epitaxial relationship
(1)
epitaxy
(1)
etching
(1)
fcc
(1)
forming gas
(1)
lithography
(1)
plasma-free process
(1)
power device
(1)
selective area etching
(1)
selective area growth
(1)
wet etching
(1)
κ-Ga2O3
(1)
RDEメタデータ定義
RDE送り状
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