[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
- ジャーナル論文
- 著者
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;Zhendong Wu (author) (この著者で検索)Yusuke Hayashi (author) (この著者で検索)National Institute for Materials Science
;
;Tetsuya Tohei (author) (この著者で検索);Kazushi Sumitani (author) (この著者で検索);Yasuhiko Imai (author) (この著者で検索);Shigeru Kimura (author) (この著者で検索)Akira Sakai (author) (この著者で検索) - キーワード
- GaN, SPring-8, nanoXRD, Machine learning
- 刊行年月日
- 2025-08-01
- 更新時刻
- 2025-07-31 12:30:18 +0900
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- ジャーナル論文
- 著者
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Zhendong Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Shigeyoshi Usami (author) (この著者で検索);Masayuki Imanishi (author) (この著者で検索);Yusuke Mori (author) (この著者で検索);Junichi Takino (author) (この著者で検索);Kazushi Sumitani (author) (この著者で検索)Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, nanoXRD, ML
- 刊行年月日
- 2026-02-15
- 更新時刻
- 2026-02-26 12:30:06 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, F-43m (216)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, P6_3mc (186)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:03:39 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
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Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- ジャーナル論文
- 著者
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Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Yuri Itokazu (author) (この著者で検索)Masafumi Jo (author) (この著者で検索)
- キーワード
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- 刊行年月日
- 2026-03-21
- 更新時刻
- 2026-04-03 09:31:08 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)
;
Mamoru Usami (author) (この著者で検索)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-05-13 10:14:20 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900