- Creative Commons BY Attribution 4.0 International (14)
- In Copyright (5)
- Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (4)
- Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
- Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International (1)
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takayoshi Oshima (author) (この著者で検索)
;
Shiyu Xiao (author) (この著者で検索)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (この著者で検索);Katsuhiro Imai (author) (この著者で検索)Takahiro Tomita (author) (この著者で検索) - キーワード
- Ga2O3, HVPE, Cr2O3
- 刊行年月日
- 2026-02-21
- 更新時刻
- 2026-02-18 16:30:15 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Shinji Nakagomi (author) (この著者で検索)Ishinomaki Senshu University Faculty of Science and Engineering
- キーワード
- Ga2O3, NiO, epitaxial relationship
- 刊行年月日
- 2023-12-01
- 更新時刻
- 2024-11-23 16:30:35 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
;
Rie Togashi (author) (この著者で検索)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- 刊行年月日
- 2024-12-31
- 更新時刻
- 2024-07-31 12:30:20 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- ジャーナル論文
- 著者
-
Kazuki Koreishi (author) (この著者で検索)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (この著者で検索)
;
Takuto Soma (author) (この著者で検索)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (この著者で検索)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (この著者で検索)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- キーワード
- Ga2O3, Wide bandgap, Bandgap engineering
- 刊行年月日
- 2026-07-06
- 更新時刻
- 2026-08-06 09:39:59 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)
- キーワード
- Ga2O3, wet etching, TMAH
- 刊行年月日
- 2026-12-31
- 更新時刻
- 2026-06-11 15:11:01 +0900
XAFS spectrum of Gallium(III) Oxide
- データセット
- コレクション
- MDR XAFS DB
- 著者
-
Masashi Ishii (editor) (この著者で検索)National Institute for Materials Science
;
Aichi SR (author) (この著者で検索)Aichi Synchrotron Radiation Center
- キーワード
- Gallium(III) Oxide, Ga2O3, Ga K-edge, Oxide, Si(111), BL5S1, Aichi SR, XAFS, collection - MDR XAFS DB
- 刊行年月日
- 更新時刻
- 2025-05-02 21:35:19 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
;Yuji Kato (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Yoshiko Nakayama (author) (この著者で検索)National Institute for Materials Science
;
Masaki Takeguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, Superlattice
- 刊行年月日
- 2018-06-01
- 更新時刻
- 2024-01-05 22:12:13 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900