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論文・データセット
コレクション
Research Highlights(1)
資源タイプ
ジャーナル論文(23)
雑誌(1)
キーワード
hexagonal boron nitride (24)
diamond (2)
Atomically-precise nanopores (1)
Charge transport (1)
Crossbar array (1)
Defect centers (1)
Electrochemistry (1)
Electrolyte gating (1)
Field-effect transistors (1)
Hydrogen-terminated diamond (1)
(more)
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Creative Commons BY Attribution 4.0 International (16)
In Copyright (4)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (2)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (1)
ファイル種別
application/pdf (24)
キーワード: hexagonal boron nitride
全ての絞り込みを解除
24 件のレコードが見つかりました。
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
ジャーナル論文
著者
Yosuke Sasama
(author) (
この著者で検索
)
https://orcid.org/0000-0002-8358-6101
NIMS Researchers Directory SAMURAI
Yosuke Sasama
;
Takuya Iwasaki
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1103-2433
NIMS Researchers Directory SAMURAI
Takuya Iwasaki
;
Masataka Imura
(author) (
この著者で検索
)
https://orcid.org/0000-0002-4236-9549
NIMS Researchers Directory SAMURAI
Masataka Imura
;
Kenji Watanabe
(author) (
この著者で検索
)
https://orcid.org/0000-0003-3701-8119
NIMS Researchers Directory SAMURAI
Kenji Watanabe
;
Takashi Taniguchi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1467-3105
NIMS Researchers Directory SAMURAI
Takashi Taniguchi
;
Yamaguchi Takahide
(author) (
この著者で検索
)
https://orcid.org/0000-0003-0208-7317
NIMS Researchers Directory SAMURAI
Yamaguchi Takahide
キーワード
diamond
,
field-effect transistors
,
hexagonal boron nitride
刊行年月日
2025-10-06
更新時刻
2025-10-21 16:06:02 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
ジャーナル論文
著者
Lukas Renn
(author) (
この著者で検索
)
Lukas Renn
;
Lisa S. Walter
(author) (
この著者で検索
)
Lisa S. Walter
;
Kenji Watanabe
(author) (
この著者で検索
)
https://orcid.org/0000-0003-3701-8119
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Kenji Watanabe
;
Takashi Taniguchi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1467-3105
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takashi Taniguchi
;
R. Thomas Weitz
(author) (
この著者で検索
)
R. Thomas Weitz
キーワード
Charge transport
,
organic semiconducting crystals
,
hexagonal boron nitride
刊行年月日
2022-01-29
更新時刻
2025-02-26 08:30:49 +0900
Optical control of multiple resistance levels in graphene for memristic applications
ジャーナル論文
著者
Harsimran Kaur Mann
(author) (
この著者で検索
)
Harsimran Kaur Mann
;
Mainak Mondal
(author) (
この著者で検索
)
Mainak Mondal
;
Vivek Sah
(author) (
この著者で検索
)
Vivek Sah
;
Kenji Watanabe
(author) (
この著者で検索
)
https://orcid.org/0000-0003-3701-8119
NIMS Researchers Directory SAMURAI
Kenji Watanabe
;
Takashi Taniguchi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1467-3105
NIMS Researchers Directory SAMURAI
Takashi Taniguchi
;
Akshay Singh
(author) (
この著者で検索
)
https://orcid.org/0000-0003-1059-065X
(unauthenticated)
Akshay Singh
;
Aveek Bid
(author) (
この著者で検索
)
https://orcid.org/0000-0002-2378-7980
(unauthenticated)
Aveek Bid
キーワード
Neuromorphic computing
,
memristors
,
hexagonal boron nitride
刊行年月日
2024-10-29
更新時刻
2025-02-06 12:30:34 +0900
[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA)
(author) (
この著者で検索
)
National Institute for Materials Science
International Center for Materials Nanoarchitectonics (WPI-MANA)
キーワード
diamond
,
field-effect transistor
,
hexagonal boron nitride
,
mobility
,
hydrogen-terminated
,
wide bandgap
,
hBN
,
graphite
,
hBN/h-BN
刊行年月日
2022-07-29
更新時刻
2023-12-26 21:47:16 +0900
キーワード
hexagonal boron nitride
(24)
diamond
(2)
Atomically-precise nanopores
(1)
Charge transport
(1)
Crossbar array
(1)
Defect centers
(1)
Electrochemistry
(1)
Electrolyte gating
(1)
Field-effect transistors
(1)
Hydrogen-terminated diamond
(1)
Nanostructure
(1)
Neuromorphic computing
(1)
Phthalocyanine
(1)
Polar crystals
(1)
Quasiparticles
(1)
Self-aligned gate electrode
(1)
Single photon emitters
(1)
Single-layer graphene
(1)
Thermal conductivity
(1)
Transition metal dichalcogenides
(1)
bilayer graphene
(1)
carrier density
(1)
dielectric strength
(1)
dynamic nuclear polarization
(1)
electroluminescence
(1)
excitons
(1)
field-effect transistor
(1)
field-effect transistors
(1)
graphene
(1)
graphite
(1)
hBN
(1)
hBN/h-BN
(1)
heat dissipation
(1)
helium ion microscopy
(1)
heterostructure
(1)
hydrogen-terminated
(1)
laser fabrication
(1)
many-body effects
(1)
mechanical stress
(1)
memory cell
(1)
memristors
(1)
microsphere
(1)
mobility
(1)
molecular beam epitaxy
(1)
optical nonlinearities
(1)
optical phonon excitation
(1)
optically detected magnetic resonance
(1)
organic semiconducting crystals
(1)
photoluminescence
(1)
quantum emitters
(1)
quantum sensor
(1)
single-photon sources
(1)
transmission electron microscopy
(1)
vacancy
(1)
vacancy-related emitters
(1)
valley Hall effect
(1)
wide bandgap
(1)
RDEメタデータ定義
RDE送り状
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