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論文(12)
キーワード
2D materials (1)
Band gap (1)
Dual-Channel (1)
MoS2 transistors (1)
Oxygen defects (1)
Passivation layer (1)
ReS2 (1)
TFT (1)
Transistors (1)
WSe2 (1)
(more)
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Creative Commons BY Attribution 4.0 International (11)
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12 件のレコードが見つかりました。
High‐Throughput Screening and Characterization of Non‐Flammable Na‐Cl Solid Electrolytes
論文
著者
Naoto Tanibata
; Naoki Nonaka ; Daisuke Urushihara ; Hayami Takeda ; Ryo Kobayashi ;
Naoaki Kuwata
; Masanobu Nakayama
キーワード
all-solid-state batteries
,
chloride solid electrolytes
,
ignition temperature
,
sodium-ion conductivity
刊行年月日
2026-01-21
更新時刻
2026-03-07 08:30:04 +0900
Quantum Transport and Spectroscopy of 2D Perovskite/Graphene Heterostructures
論文
著者
Yan Sun ; Corentin Morice ; Damien Garrot ; Raphael Weil ;
Kenji Watanabe
;
Takashi Taniguchi
; Miguel Monteverde ; Alexei D. Chepelianskii
キーワード
perovskite/graphene heterostructures
,
quantum transport
,
photo-assisted transport
刊行年月日
2024-09-03
更新時刻
2026-02-16 16:30:13 +0900
Strained Organic Thin‐Film Single Crystals for High‐Mobility and High‐Frequency Transistors
論文
著者
Mizuki Abe ;
Yu Yamashita
; Taiki Sawada ; Tatsuyuki Makita ; Shohei Kumagai ; Shun Watanabe ;
Jun Takeya
キーワード
organic semiconductor
,
transistor
刊行年月日
2025-06-17
更新時刻
2025-11-18 12:30:06 +0900
Oxygen Defects and Instability in Very Thin a‐IGZO TFTs
論文
著者
Hanjun Cho
;
Masatake Tsuji
;
Shigenori Ueda
;
Junghwan Kim
;
Hideo Hosono
キーワード
a-IGZO
,
TFT
,
Oxygen defects
,
positive-bias-stress instability
刊行年月日
2025-07-07
更新時刻
2025-09-24 12:30:21 +0900
Reversal of Spin‐Torque Polarity with Inverting Current Vorticity in Composition‐Graded Layer at the Ti/W Interface
論文
著者
Hayato Nakayama
;
Taisuke Horaguchi
;
Jun Uzuhashi
;
Cong He
;
Hiroaki Sukegawa
;
Tadakatsu Ohkubo
;
Seiji Mitani
;
Kazuto Yamanoi
;
Yukio Nozaki
キーワード
spintronics
,
spin vorticity coupling
,
spin torque
,
compositional gradient
,
transmission electron microscopy
刊行年月日
2025-04-08
更新時刻
2025-05-16 12:30:14 +0900
Fluorinated Graphene Contacts and Passivation Layer for MoS
2
Field Effect Transistors
論文
著者
Huije Ryu ; Dong‐Hyun Kim ; Junyoung Kwon ; Sang Kyu Park ; Wanggon Lee ; Hyungtak Seo ;
Kenji Watanabe
;
Takashi Taniguchi
; SunPhil Kim ; Arend M. van der Zande ; Jangyup Son ; Gwan‐Hyoung Lee
キーワード
Passivation layer
,
fluorinated graphene
,
MoS2 transistors
刊行年月日
2022-03-09
更新時刻
2025-02-26 08:30:36 +0900
Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene
論文
著者
Eike Icking ; Luca Banszerus ; Frederike Wörtche ; Frank Volmer ; Philipp Schmidt ; Corinne Steiner ; Stephan Engels ; Jonas Hesselmann ; Matthias Goldsche ;
Kenji Watanabe
;
Takashi Taniguchi
; Christian Volk ; Bernd Beschoten ; Christoph Stampfer
キーワード
Band gap
,
bilayer graphene
,
semiconductor applications
刊行年月日
2022-07-27
更新時刻
2025-03-03 16:30:27 +0900
Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms
論文
著者
Takashi Tsuchiya
;
Daiki Nishioka
;
Wataru Namiki
;
Kazuya Terabe
キーワード
reservoir computing
,
ion-gating reservoir
,
solid state ionics
,
ion-gating transistor
刊行年月日
2024-11-20
更新時刻
2024-12-13 12:30:51 +0900
Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces
論文
著者
Kirill Bulgarevich
;
Kenji Sakamoto
;
Takeshi Yasuda
;
Takeo Minari
;
Masayuki Takeuchi
キーワード
organic field-effect transistors
,
polymeric organic semiconductors
,
hydrophobic-hydrophilic patterns
,
bias-stress resistance
,
amorphous perfluoropolymers
刊行年月日
2020-06-09
更新時刻
2024-12-03 16:30:45 +0900
Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
論文
著者
Yoshitaka Shingaya
;
Amir Zulkefli
;
Takuya Iwasaki
;
Ryoma Hayakawa
;
Shu Nakaharai
;
Kenji Watanabe
;
Takashi Taniguchi
;
Yutaka Wakayama
キーワード
2D materials
,
antiambipolar transistors
,
reconfigurable logic circuits
,
ReS2
,
WSe2
刊行年月日
2022-09-25
更新時刻
2024-09-18 12:30:12 +0900
キーワード
2D materials
(1)
Band gap
(1)
Dual-Channel
(1)
MoS2 transistors
(1)
Oxygen defects
(1)
Passivation layer
(1)
ReS2
(1)
TFT
(1)
Transistors
(1)
WSe2
(1)
a-IGZO
(1)
all-solid-state batteries
(1)
amorphous perfluoropolymers
(1)
antiambipolar transistors
(1)
bias-stress resistance
(1)
bilayer graphene
(1)
chloride solid electrolytes
(1)
compositional gradient
(1)
fluorinated graphene
(1)
hydrophobic-hydrophilic patterns
(1)
ignition temperature
(1)
ion-gating reservoir
(1)
ion-gating transistor
(1)
negative volumetric thermal expansion
(1)
organic field-effect transistors
(1)
organic semiconductor
(1)
perovskite/graphene heterostructures
(1)
photo-assisted transport
(1)
polymeric organic semiconductors
(1)
positive-bias-stress instability
(1)
pressure
(1)
quantum transport
(1)
reconfigurable logic circuits
(1)
reservoir computing
(1)
semiconductor applications
(1)
sodium-ion conductivity
(1)
solid state ionics
(1)
spin torque
(1)
spin vorticity coupling
(1)
spintronics
(1)
superconductor
(1)
transistor
(1)
transmission electron microscopy
(1)
RDEメタデータ定義
RDE送り状
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