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説明:

Amorphous oxide semiconductor (AOS) thin-film transistors (TFT) have gained significant attention for their potential in capacitor-free next-generation memory applications. However, improving threshold voltage (VTH ) stability and precisely controlling carrier concentration in ultra-thin channels remain critical challenges. In this study, an extraordinarily large positive-bias-stress (PBS) instability in hydrogen-free amorphous IGZO (a-IGZO)-TFTs that emerges as the channel thickness decreases is reported. This instability can be attributed to acceptors interacting with donors at shallow levels below the conduction band minimum (CBM).

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: a-IGZO, TFT, Oxygen defects, positive-bias-stress instability

刊行年月日: 2025-07-07

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 11 issue. 15 e00349

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
• Japan Society for the Promotion of Science JP23K19266
• Japan Society for the Promotion of Science JP24K17753

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202500349

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更新時刻: 2025-09-24 12:30:21 +0900

MDRでの公開時刻: 2025-09-24 12:18:54 +0900