Article Oxygen Defects and Instability in Very Thin a‐IGZO TFTs

Hanjun Cho ORCID ; Masatake Tsuji ORCID ; Shigenori Ueda SAMURAI ORCID ; Junghwan Kim ORCID ; Hideo Hosono SAMURAI ORCID

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Hanjun Cho, Masatake Tsuji, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Oxygen Defects and Instability in Very Thin a‐IGZO TFTs. Advanced Electronic Materials. 2025, 11 (15), e00349. https://doi.org/10.1002/aelm.202500349

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(abstract)

Amorphous oxide semiconductor (AOS) thin-film transistors (TFT) have gained significant attention for their potential in capacitor-free next-generation memory applications. However, improving threshold voltage (VTH ) stability and precisely controlling carrier concentration in ultra-thin channels remain critical challenges. In this study, an extraordinarily large positive-bias-stress (PBS) instability in hydrogen-free amorphous IGZO (a-IGZO)-TFTs that emerges as the channel thickness decreases is reported. This instability can be attributed to acceptors interacting with donors at shallow levels below the conduction band minimum (CBM).

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Keyword: a-IGZO, TFT, Oxygen defects, positive-bias-stress instability

Date published: 2025-07-07

Publisher: Wiley

Journal:

  • Advanced Electronic Materials (ISSN: 2199160X) vol. 11 issue. 15 e00349

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
  • Japan Society for the Promotion of Science JP23K19266
  • Japan Society for the Promotion of Science JP24K17753

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/aelm.202500349

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Updated at: 2025-09-24 12:30:21 +0900

Published on MDR: 2025-09-24 12:18:54 +0900

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