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The importance of controlling both the charge carrier density and the band gap of a semicon- ductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first evidence of the tunable gap was already found ten years ago, it took until recent to fab- ricate sufficiently clean heterostructures where the electrically induced gap could be used to fully suppress transport or confine charge carriers. Here, we present a detailed study of the tunable band gap in gated bilayer graphene characterized by temperature-activated transport and finite- bias spectroscopy measurements. The latter method allows comparing different gate materials and device technologies, which directly affects the disorder potential in bilayer graphene. We show that graphite-gated bilayer graphene exhibits extremely low disorder and as good as no subgap states resulting in ultraclean tunable band gaps up to 120 meV. The gaps are in good agreement with theory and allow complete current suppression making a wide range of semiconductor applications possible.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Band gap, bilayer graphene, semiconductor applications

刊行年月日: 2022-07-27

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 8 issue. 11 2200510

研究助成金:

• Graphene Flagship 881603
• European Research Council 820254
• Deutsche Forschungsgemeinschaft EXC 2004/1 ‐ 390534769
• Deutsche Forschungsgemeinschaft STA 1146/11‐1
• Deutsche Forschungsgemeinschaft BE 2441/9‐1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202200510

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更新時刻: 2025-03-03 16:30:27 +0900

MDRでの公開時刻: 2025-03-03 16:30:27 +0900