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説明:

Realizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one-step technique is shown that simultaneously utilizes mono- layer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination by XeF2 gas exposure. Metal elec- trodes for source and drain are fabricated on top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm2 V−1 s−1. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Passivation layer, fluorinated graphene, MoS2 transistors

刊行年月日: 2022-03-09

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 8 issue. 10 2101370

研究助成金:

• National Research Foundation of Korea NRF‐2021R1A2C3014316
• National Research Foundation of Korea NRF‐2018M3D1A1058793

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202101370

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更新時刻: 2025-02-26 08:30:36 +0900

MDRでの公開時刻: 2025-02-26 08:30:36 +0900