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Realizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one-step technique is shown that simultaneously utilizes mono- layer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination by XeF2 gas exposure. Metal elec- trodes for source and drain are fabricated on top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm2 V−1 s−1. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Passivation layer, fluorinated graphene, MoS2 transistors

Date published: 2022-03-09

Publisher: Wiley

Journal:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 8 issue. 10 2101370

Funding:

• National Research Foundation of Korea NRF‐2021R1A2C3014316
• National Research Foundation of Korea NRF‐2018M3D1A1058793

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/aelm.202101370

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Updated at: 2025-02-26 08:30:36 +0900

Published on MDR: 2025-02-26 08:30:36 +0900