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説明:

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shaped transfer curves yielded by the bottom-gate voltage were effectively controlled by the top-gate voltage. This feature was applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual-gate AAT exhibited all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, we achieved drain voltage (Vd)-induced switching between AND and OR logic operations. These features are advantageous for simplifying circuit design.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: 2D materials, antiambipolar transistors, reconfigurable logic circuits, ReS2, WSe2

刊行年月日: 2022-09-25

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 9 issue. 1 2200704

研究助成金:

• Japan Society for the Promotion of Science 21F21052

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202200704

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更新時刻: 2024-09-18 12:30:12 +0900

MDRでの公開時刻: 2024-09-18 12:30:12 +0900