Article Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations

Yoshitaka Shingaya SAMURAI ORCID (National Institute for Materials Science) ; Amir Zulkefli ORCID (National Institute for Materials Science) ; Takuya Iwasaki SAMURAI ORCID (National Institute for Materials Science) ; Ryoma Hayakawa SAMURAI ORCID (National Institute for Materials Science) ; Shu Nakaharai ORCID (National Institute for Materials Science) ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Yutaka Wakayama SAMURAI ORCID (National Institute for Materials Science)

Adv Elect Materials - 2022 - Shingaya - Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2 WSe2 Heterojunction for-2.pdf
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Citation
Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama. Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations. Advanced Electronic Materials. 2022, 9 (1), 2200704.
SAMURAI

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(abstract)

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shaped transfer curves yielded by the bottom-gate voltage were effectively controlled by the top-gate voltage. This feature was applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual-gate AAT exhibited all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, we achieved drain voltage (Vd)-induced switching between AND and OR logic operations. These features are advantageous for simplifying circuit design.

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Keyword: 2D materials, antiambipolar transistors, reconfigurable logic circuits, ReS2, WSe2

Date published: 2022-09-25

Publisher: Wiley

Journal:

  • Advanced Electronic Materials (ISSN: 2199160X) vol. 9 issue. 1 2200704

Funding:

  • Japan Society for the Promotion of Science 21F21052

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/aelm.202200704

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Updated at: 2024-09-18 12:30:12 +0900

Published on MDR: 2024-09-18 12:30:12 +0900

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