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Description:

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shaped transfer curves yielded by the bottom-gate voltage were effectively controlled by the top-gate voltage. This feature was applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual-gate AAT exhibited all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, we achieved drain voltage (Vd)-induced switching between AND and OR logic operations. These features are advantageous for simplifying circuit design.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: 2D materials, antiambipolar transistors, reconfigurable logic circuits, ReS2, WSe2

Date published: 2022-09-25

Publisher: Wiley

Journal:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 9 issue. 1 2200704

Funding:

• Japan Society for the Promotion of Science 21F21052

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/aelm.202200704

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Updated at: 2024-09-18 12:30:12 +0900

Published on MDR: 2024-09-18 12:30:12 +0900