6 records found.
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- Ga2O3, etching, plasma-free
- Date published
- 2025-12-31
- Updated at
- 2025-09-04 12:30:19 +0900
1D Crystallographic Etching of Few‐Layer WS2
- Journal article
- Creator
-
Shisheng Li (author) (Search by this author)
;
Yung‐Chang Lin (author) (Search by this author)
https://orcid.org/0000-0002-3968-7239
(unauthenticated)
;
;Yiling Chiew (author) (Search by this author);Yunyun Dai (author) (Search by this author);Zixuan Ning (author) (Search by this author);Yaming Zhang (author) (Search by this author);Hideaki Nakajima (author) (Search by this author);Hong En Lim (author) (Search by this author);Jing Wu (author) (Search by this author);Yasuhisa Neitoh (author) (Search by this author);Toshiya Okazaki (author) (Search by this author);Yang Sun (author) (Search by this author);Zhipei Sun (author) (Search by this author);Kazu Suenaga (author) (Search by this author)Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Takaaki Taniguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- 1D nanotrenches, etching, photoluminescence, second harmonic generation, transition metal dichalcogenides
- Date published
- 2024-10-03
- Updated at
- 2024-11-20 16:30:24 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Masataka Imura (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, etching
- Date published
- 2021-10-19
- Updated at
- 2024-01-22 09:38:31 +0900
Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- β-Ga2O3, etching
- Date published
- 2023-08-01
- Updated at
- 2024-08-21 08:30:30 +0900