3 records found.
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author) - Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, dislocation, ELO
- Date published
- 2021-11-07
- Updated at
- 2024-01-30 16:49:49 +0900
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Elaheh Ahmadi (author) (Search by this author)
- Keyword
- α-Ga2O3, epitaxy, power device
- Date published
- 2022-12-26
- Updated at
- 2024-01-29 15:45:56 +0900