8 records found. Displaying records 1 to 8.

Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
Irokawa_2026_ECS_J._Solid_State_Sci._Technol._15_055002.pdf
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
Journal article
Creator
ORCID SAMURAI ;
Mamoru Usami (author) (Search by this author)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
Keyword
GaN
Date published
2026-05-01
Updated at
2026-05-13 10:14:20 +0900
Atomic-scale observation of native oxides on c- and m-faced GaN surfaces.pdf
Atomic-scale observation of native oxides on c - and m -faced GaN surfaces
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
; ORCID SAMURAI
Keyword
transmission electron microscopy, gallium nitride
Date published
2026-04-01
Updated at
2026-04-02 10:10:21 +0900
Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf
Observation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 Process
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
Keyword
transmission electron microscopy, metal-oxide-semiconductor
Date published
2025-08-01
Updated at
2025-08-26 11:15:20 +0900
1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
Journal article
Creator
Masahiro Hara (author) (Search by this author)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Tsunenobu Kimoto (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
Keyword
GaN
Date published
2025-05-07
Updated at
2025-05-08 12:30:16 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
Journal article
Creator
Yoshihiro Irokawa (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Kazuhito Tsukagoshi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN
Date published
2024-08-01
Updated at
2024-09-02 12:30:27 +0900
JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Journal article
Creator
Shigefusa F. Chichibu (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Kohei Shima (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Akira Uedono (author) (Search by this author)
Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
;
Shoji Ishibashi (author) (Search by this author)
AIST
;
Hiroko Iguchi (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Tetsuo Narita (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Keita Kataoka (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Ryo Tanaka (author) (Search by this author)
Fuji Electric Corporation
;
Shinya Takashima (author) (Search by this author)
Fuji Electric Corporation
;
Katsunori Ueno (author) (Search by this author)
Fuji Electric Corporation
;
Masaharu Edo (author) (Search by this author)
Fuji Electric Corporation
;
Hirotaka Watanabe (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Atsushi Tanaka (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Yoshio Honda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Jun Suda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Hiroshi Amano (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Tetsu Kachi (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN
Date published
2024-05-14
Updated at
2024-05-09 16:30:16 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Journal article
Creator
色川 芳宏 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
大井 暁彦 (author) (Search by this author)
Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
ORCID SAMURAI ;
生田目 俊秀 (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI ;
小出 康夫 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN, hydrogen, Schottky barrier height
Date published
2024-04-01
Updated at
2024-04-10 16:30:21 +0900
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