Observation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 Process

Jun Uzuhashi; Yoshihiro Irokawa; Toshihide Nabatame; Tadakatsu Ohkubo; Yasuo Koide

doi:10.1149/2162-8777/adf3e3

論文 Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

Jun Uzuhashi ; Yoshihiro Irokawa ; Toshihide Nabatame ; Tadakatsu Ohkubo ; Yasuo Koide

Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf

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Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Tadakatsu Ohkubo, Yasuo Koide. Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process. ECS Journal of Solid State Science and Technology. 2025, 14 (8), 085001. https://doi.org/10.1149/2162-8777/adf3e3

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(abstract)

We previously reported that a dummy-SiO2 process improved the dielectric/GaN interface properties [Y. Irokawa et al., ECS J. Solid State Sci. Technol. 13, 085003 (2024)]; however, the improvement mechanism has remained unclear. In this study, the atomic-scale structural changes at Al2O3/GaN interfaces prepared with the dummy-SiO2 process are investigated through aberration-corrected scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy. The results reveal that disordered GaN(O) polarity in the interfacial layer in a sample prepared by the standard process was restored to some extent after the dummy-SiO2 process, which likely led to the improved interface electrical properties.

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