Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

論文

著者

Jun Uzuhashi ; Yoshihiro Irokawa ; Toshihide Nabatame ; Tadakatsu Ohkubo ; Yasuo Koide

キーワード

transmission electron microscopy, metal-oxide-semiconductor

刊行年月日

2025-08-01

更新時刻

2025-08-26 11:15:20 +0900