Article Observation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 Process

Jun Uzuhashi SAMURAI ORCID ; Yoshihiro Irokawa SAMURAI ORCID ; Toshihide Nabatame SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Yasuo Koide

Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf
Download file (632 KB)
Download as zip (515 KB)
Collection

Citation
Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Tadakatsu Ohkubo, Yasuo Koide. Observation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 Process. ECS Journal of Solid State Science and Technology. 2025, 14 (8), 085001. https://doi.org/10.1149/2162-8777/adf3e3

Description:

(abstract)

We previously reported that a dummy-SiO2 process improved the dielectric/GaN interface properties [Y. Irokawa et al., ECS J. Solid State Sci. Technol. 13, 085003 (2024)]; however, the improvement mechanism has remained unclear. In this study, the atomic-scale structural changes at Al2O3/GaN interfaces prepared with the dummy-SiO2 process are investigated through aberration-corrected scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy. The results reveal that disordered GaN(O) polarity in the interfacial layer in a sample prepared by the standard process was restored to some extent after the dummy-SiO2 process, which likely led to the improved interface electrical properties.

Rights:

Keyword: transmission electron microscopy, metal-oxide-semiconductor

Date published: 2025-08-01

Publisher: The Electrochemical Society

Journal:

  • ECS Journal of Solid State Science and Technology (ISSN: 21628769) vol. 14 issue. 8 085001

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology, Japan JPJ009777
  • JSPS KAKENHI 23K03949

Manuscript type: Publisher's version (Version of record)

MDR DOI: https://doi.org/10.48505/nims.5628

First published URL: https://doi.org/10.1149/2162-8777/adf3e3

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-08-26 11:15:20 +0900

Published on MDR: 2025-08-06 16:18:58 +0900

Filename Size
Filename Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf (Thumbnail)
application/pdf 		Size 632 KB Detail