- Creative Commons BY Attribution 4.0 International (17)
- Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (7)
- In Copyright (6)
- Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
- Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International (1)
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC. - Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, fcc
- Date published
- 2026-02-16
- Updated at
- 2026-02-18 16:30:08 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- Journal article
- Creator
-
Yuhua Tsai (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Yusuke Hashimoto (author) (Search by this author)NAIST;ZeXu Sun (author) (Search by this author)NAIST;Takuya Moriki (author) (Search by this author)NAIST;Takashi Tadamura (author) (Search by this author)NAISTTakahiro Nagata (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Piero Mazzolini (author) (Search by this author)University of Parma;Antonella Parisini (author) (Search by this author)University of Parma;Matteo Bosi (author) (Search by this author)IMEM-CNR;Luca Seravalli (author) (Search by this author)IMEM-CNR;Tomohiro Matsushita (author) (Search by this author)NAISTYoshiyuki Yamashita (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
- Keyword
- Ga2O3, κ-Ga2O3
- Date published
- 2024-04-03
- Updated at
- 2025-03-07 12:30:11 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takashi Shinohe (author) (Search by this author)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- Keyword
- Ga2O3, dislocation, ELO, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-04-23 12:30:12 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (−112), HVPE, HCl gas etching
- Date published
- 2026-12-31
- Updated at
- 2026-07-16 10:12:49 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 14:36:41 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 12:32:36 +0900
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
- Dataset
- Collection
- Thermophysical Property Original Datasets
- Creator
-
;Takehiko Ishikawa (depositor) (Search by this author)Japan Aerospace Exploration AgencyMasashi Ishii (editor) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Ceramic, Density, ISS-ELF, Electrostatic Levitation, collection - Thermophys Datasets
- Date published
- Updated at
- 2024-03-30 18:40:44 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, HCl gas etching
- Date published
- 2023-06-01
- Updated at
- 2024-06-15 08:30:13 +0900