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Resource type
Journal article(5)
Keyword
HVPE (5)
α-Ga2O3 (2)
ELO (1)
ScN (1)
dislocation (1)
β-Ga2O3 (1)
ε-Ga2O3 (1)
κ-Ga2O3 (1)
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In Copyright (5)
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application/pdf (5)
Keyword: HVPE
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5 records found.
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
Journal article
Creator
Yuichi Oshima
(author) (
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)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Shingo Yagyu
(author) (
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)
Shingo Yagyu
;
Takashi Shinohe
(author) (
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)
Takashi Shinohe
Keyword
α-Ga2O3
,
HVPE
,
dislocation
,
ELO
Date published
2021-11-07
Updated at
2024-01-30 16:49:49 +0900
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Journal article
Creator
Yuichi Oshima
(author) (
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)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Encarnación G. Víllora
(author) (
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)
Encarnación G. Víllora
;
Kiyoshi Shimamura
(author) (
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)
https://orcid.org/0000-0001-6502-8731
NIMS Researchers Directory SAMURAI
Kiyoshi Shimamura
Keyword
ScN
,
HVPE
Date published
2014-04-21
Updated at
2024-01-30 16:35:16 +0900
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Journal article
Creator
Yuichi Oshima
(author) (
Search by this author
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Encarnación G. Víllora
(author) (
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)
Encarnación G. Víllora
;
Yoshitaka Matsushita
(author) (
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)
https://orcid.org/0000-0002-4968-8905
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yoshitaka Matsushita
;
Satoshi Yamamoto
(author) (
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)
https://orcid.org/0000-0002-1171-7723
National Institute for Materials Science
Satoshi Yamamoto
;
Kiyoshi Shimamura
(author) (
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)
https://orcid.org/0000-0001-6502-8731
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Kiyoshi Shimamura
Keyword
κ-Ga2O3
,
ε-Ga2O3
,
HVPE
Date published
2015-08-28
Updated at
2024-01-30 15:45:38 +0900
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Journal article
Creator
Yuichi Oshima
(author) (
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)
Yuichi Oshima
;
Katsuaki Kawara
(author) (
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)
Katsuaki Kawara
;
Takayoshi Oshima
(author) (
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)
Takayoshi Oshima
;
Mitsuru Okigawa
(author) (
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)
Mitsuru Okigawa
;
Takashi Shinohe
(author) (
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)
Takashi Shinohe
Keyword
α-Ga2O3
,
HVPE
Date published
2020-05-01
Updated at
2024-01-22 09:40:57 +0900
Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
Journal article
Creator
Yuichi Oshima
(author) (
Search by this author
)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Takayoshi Oshima
(author) (
Search by this author
)
https://orcid.org/0000-0001-8550-9735
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Takayoshi Oshima
Keyword
β-Ga2O3
,
HVPE
Date published
2023-10-01
Updated at
2024-08-31 08:31:17 +0900
Keyword
HVPE
(5)
α-Ga2O3
(2)
ELO
(1)
ScN
(1)
dislocation
(1)
β-Ga2O3
(1)
ε-Ga2O3
(1)
κ-Ga2O3
(1)
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