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代替タイトル: Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

説明:

The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and b-Ga2O3 (-201) using gallium chloride and oxygen as precursors. X-ray omega-2theta and pole figure measurements reveal that the films on GaN (0001) and AlN (0001) are single-crystalline (0001) e-Ga2O3, while a c-plane e-Ga2O3 film grown on b-Ga2O3 (-201) exhibits additional misoriented domains. High temperature X-ray diffraction measurement reveals that the e-Ga2O3 films are stable up to approximately 700℃. The optical bandgap of e-Ga2O3 is determined from the transmittance spectrum to be 4.9 eV.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yuichi Oshima et al., J. Appl. Phys. 118, 085301 (2015) and may be found at https://doi.org/10.1063/1.4929417.

キーワード: κ-Ga2O3, ε-Ga2O3, HVPE

刊行年月日: 2015-08-28

出版者: AIP Publishing

掲載誌:

• JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 118 issue. 8 p. 85301-85301

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/1.4929417

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更新時刻: 2024-01-30 15:45:38 +0900

MDRでの公開時刻: 2024-01-31 08:30:10 +0900