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Alternative title: Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description:

The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and b-Ga2O3 (-201) using gallium chloride and oxygen as precursors. X-ray omega-2theta and pole figure measurements reveal that the films on GaN (0001) and AlN (0001) are single-crystalline (0001) e-Ga2O3, while a c-plane e-Ga2O3 film grown on b-Ga2O3 (-201) exhibits additional misoriented domains. High temperature X-ray diffraction measurement reveals that the e-Ga2O3 films are stable up to approximately 700℃. The optical bandgap of e-Ga2O3 is determined from the transmittance spectrum to be 4.9 eV.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yuichi Oshima et al., J. Appl. Phys. 118, 085301 (2015) and may be found at https://doi.org/10.1063/1.4929417.

Keyword: κ-Ga2O3, ε-Ga2O3, HVPE

Date published: 2015-08-28

Publisher: AIP Publishing

Journal:

• JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 118 issue. 8 p. 85301-85301

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/1.4929417

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Updated at: 2024-01-30 15:45:38 +0900

Published on MDR: 2024-01-31 08:30:10 +0900