Keyword: Ga2O3
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21 records found. Displaying records 1 to 10.

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J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ;
Shiyu Xiao (author) (Search by this author)
ORCID ;
Kazuto Murakami (author) (Search by this author)
;
Katsuhiro Imai (author) (Search by this author)
;
Takahiro Tomita (author) (Search by this author)
Keyword
Ga2O3, HVPE, Cr2O3
Date published
2026-02-21
Updated at
2026-02-18 16:30:15 +0900
alpha_SL.docx
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yuji Kato (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yoshiko Nakayama (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Masaki Takeguchi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, Superlattice
Date published
2018-06-01
Updated at
2024-01-05 22:12:13 +0900
260206_ASGO_Letter_manuscript_v6.pdf
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
Journal article
Creator
Kazuki Koreishi (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
Takuto Soma (author) (Search by this author)
ORCID ;
Kohei Yoshimatsu (author) (Search by this author)
ORCID ;
Akira Ohtomo (author) (Search by this author)
ORCID
Keyword
Ga2O3, Wide bandgap, Bandgap engineering
Date published
2026-07-06
Updated at
2026-08-06 09:39:59 +0900
T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography.docx
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, lithography
Date published
2023-01-01
Updated at
2024-01-24 11:20:15 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, HVPE
Date published
2025-12-31
Updated at
2025-11-28 08:30:04 +0900
055207_1_5.0260753-2-8.pdf
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, HCl gas etching, air bridge
Date published
2025-05-01
Updated at
2025-05-07 12:30:22 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
jjap_65_13_138001.pdf
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (011), AFM, TEM
Date published
2026-07-15
Updated at
2026-07-09 10:29:39 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (−112), HVPE, HCl gas etching
Date published
2026-12-31
Updated at
2026-07-16 10:12:49 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, TMAH
Date published
2026-02-01
Updated at
2026-02-25 12:30:03 +0900
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