7 records found.
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- Journal article
- Creator
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;Shigefusa F. Chichibu (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (Search by this author)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (Search by this author)AIST;Hiroko Iguchi (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (Search by this author)Fuji Electric Corporation;Shinya Takashima (author) (Search by this author)Fuji Electric Corporation;Katsunori Ueno (author) (Search by this author)Fuji Electric Corporation;Masaharu Edo (author) (Search by this author)Fuji Electric Corporation;Hirotaka Watanabe (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
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Yoshihiro Irokawa (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-05-14
- Updated at
- 2024-05-09 16:30:16 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Journal article
- Creator
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Takahiro Nagata (author) (Search by this author)
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Asahiko Matsuda (author) (Search by this author)
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Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
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Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
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Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
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Shigenori Ueda (author) (Search by this author)
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Takako Kimura (author) (Search by this author)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
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Christian Dussarrat (author) (Search by this author)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
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Toyohiro Chikyow (author) (Search by this author)
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
- Journal article
- Creator
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T. Hamachi (author) (Search by this author)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
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T. Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
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Y. Hayashi (author) (Search by this author)
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S. Usami (author) (Search by this author)
https://orcid.org/0000-0002-9710-1718
(unauthenticated)
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;M. Imanishi (author) (Search by this author);Y. Mori (author) (Search by this author);K. Sumitani (author) (Search by this author)Y. Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
S. Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
A. Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, Dislocation, SPring-8
- Date published
- 2024-06-14
- Updated at
- 2024-12-05 12:47:52 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
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Masataka Imura (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Journal article
- Creator
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;Hironori Okumura (author) (Search by this author);Yohei Ogawara (author) (Search by this author);Manabu Togawa (author) (Search by this author);Masaya Miyahara (author) (Search by this author);Tadaaki Isobe (author) (Search by this author);Kosuke Itabashi (author) (Search by this author);Jiro Nishinaga (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- Journal article
- Creator
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色川 芳宏 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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大井 暁彦 (author) (Search by this author)Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
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生田目 俊秀 (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
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小出 康夫 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN, hydrogen, Schottky barrier height
- Date published
- 2024-04-01
- Updated at
- 2024-04-10 16:30:21 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
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Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, GaN
- Date published
- Updated at
- 2026-01-24 12:32:02 +0900