Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
- Journal article
- Creator
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;Yuichi Oshima (author) (Search by this author);Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author);Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE
- Date published
- 2020-05-01
- Updated at
- 2024-01-22 09:40:57 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
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Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author) - Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900