5 records found.
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author) - Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
- Journal article
- Creator
-
;Yudai Yamaguchi (author) (Search by this author);Yuya Kanitani (author) (Search by this author);Yoshihiro Kudo (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
Shigetaka Tomiya (author) (Search by this author)
- Keyword
- InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy
- Date published
- 2022-09-14
- Updated at
- 2024-01-05 22:12:51 +0900
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
- Journal article
- Creator
-
;Katsuaki Kawara (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, ELO
- Date published
- 2020-07-01
- Updated at
- 2024-01-22 09:40:04 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900