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Resource type
Journal article(4)
Keyword
dislocation (4)
ELO (2)
HVPE (2)
α-Ga2O3 (2)
Ga2O3 (1)
Silicon (1)
network analysis (1)
twin grain boundary (1)
(more)
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Creative Commons BY Attribution 4.0 International (3)
In Copyright (1)
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application/pdf (4)
Keyword: dislocation
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Luminescence properties of dislocations in α-Ga
2
O
3
Journal article
Creator
Mugove Maruzane
(author) (
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)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
Mugove Maruzane
;
Yuichi Oshima
(author) (
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)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Olha Makydonska
(author) (
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)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
Olha Makydonska
;
Paul R Edwards
(author) (
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)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
Paul R Edwards
;
Robert W Martin
(author) (
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)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
Robert W Martin
;
Fabien C-P Massabuau
(author) (
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)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
Fabien C-P Massabuau
Keyword
Ga2O3
,
dislocation
Date published
2025-01-20
Updated at
2024-11-13 08:31:40 +0900
Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis
Journal article
Creator
Kazuma Torii
(author) (
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)
a Graduate School of Engineering, Nagoya University
Kazuma Torii
;
Takuto Kojima
(author) (
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)
Takuto Kojima
;
Kentaro Kutsukake
(author) (
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)
Kentaro Kutsukake
;
Hiroaki Kudo
(author) (
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)
Hiroaki Kudo
;
Noritaka Usami
(author) (
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)
Noritaka Usami
Keyword
Silicon
,
dislocation
,
twin grain boundary
,
network analysis
Date published
2025-12-31
Updated at
2025-07-16 16:14:54 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
Journal article
Creator
Yuichi Oshima
(author) (
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)
https://orcid.org/0000-0001-8293-4891
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Yuichi Oshima
;
Shingo Yagyu
(author) (
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)
Shingo Yagyu
;
Takashi Shinohe
(author) (
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)
Takashi Shinohe
Keyword
α-Ga2O3
,
HVPE
,
dislocation
,
ELO
Date published
2021-11-07
Updated at
2024-01-30 16:49:49 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Journal article
Creator
Y. Oshima
(author) (
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)
https://orcid.org/0000-0001-8293-4891
NIMS Researchers Directory SAMURAI
Y. Oshima
;
K. Kawara
(author) (
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)
K. Kawara
;
T. Shinohe
(author) (
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)
T. Shinohe
;
T. Hitora
(author) (
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)
T. Hitora
;
M. Kasu
(author) (
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)
M. Kasu
;
S. Fujita
(author) (
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)
S. Fujita
Keyword
α-Ga2O3
,
HVPE
,
ELO
,
dislocation
Date published
2019-02-01
Updated at
2024-01-29 16:48:15 +0900
Keyword
dislocation
(4)
ELO
(2)
HVPE
(2)
α-Ga2O3
(2)
Ga2O3
(1)
Silicon
(1)
network analysis
(1)
twin grain boundary
(1)
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Collection
Resource type
Journal article(4)
Keyword
dislocation (4)
ELO (2)
HVPE (2)
α-Ga2O3 (2)
Ga2O3 (1)
Silicon (1)
network analysis (1)
twin grain boundary (1)
(more)
License
Creative Commons BY Attribution 4.0 International (3)
In Copyright (1)
File type
application/pdf (4)