Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
- Dataset
- Creator
-
SUMIYA, Masatomo (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
- Date published
- 2022-12-31
- Updated at
- 2024-01-05 22:11:14 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)
;
Mamoru Usami (author) (Search by this author)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Toshihide Nabatame (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2026-05-01
- Updated at
- 2026-05-13 10:14:20 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- Dataset
- Creator
-
SUMIYA, Masatomo (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- Date published
- 2020-11-19
- Updated at
- 2024-01-05 22:13:22 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Journal article
- Creator
-
Masahiro Hara (author) (Search by this author)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (Search by this author)
;
Yoshihiro Irokawa (author) (Search by this author)
;
;Tomomi Sawada (author) (Search by this author);Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author);Tsunenobu Kimoto (author) (Search by this author)Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- Journal article
- Creator
-
Kongping Wu (author) (Search by this author)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (Search by this author);Leng Zhang (author) (Search by this author);Wenxiu Wang (author) (Search by this author);Fangzhen Li (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- diamond, heat spreader, GaN, calculation
- Date published
- 2024-12-19
- Updated at
- 2025-04-22 08:30:20 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Journal article
- Creator
-
Takahiro Nagata (author) (Search by this author)
;
Asahiko Matsuda (author) (Search by this author)
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)
;
Takako Kimura (author) (Search by this author)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (Search by this author)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (Search by this author)
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- Journal article
- Creator
-
;Zhanpeng Sun (author) (Search by this author);Yunfei Song (author) (Search by this author);Zijun Qi (author) (Search by this author);Xiang Sun (author) (Search by this author)Meiyong Liao (author) (Search by this author)National Institute for Materials Science
;
;Rui Li (author) (Search by this author)Qijun Wang (author) (Search by this author)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
;
;Lijie Li (author) (Search by this author)Gai Wu (author) (Search by this author)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
;
;Wei Shen (author) (Search by this author)Sheng Liu (author) (Search by this author)
- Keyword
- thermal conductivity, GaN, Diamond
- Date published
- 2025-01-16
- Updated at
- 2025-04-22 12:30:10 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- Journal article
- Creator
-
色川 芳宏 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
大井 暁彦 (author) (Search by this author)Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
;
生田目 俊秀 (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
小出 康夫 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN, hydrogen, Schottky barrier height
- Date published
- 2024-04-01
- Updated at
- 2024-04-10 16:30:21 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
;
;Tomomi Sawada (author) (Search by this author)National Institute for Materials Science;Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Journal article
- Creator
-
Shunsuke Yamashita (author) (Search by this author)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (Search by this author)Jun Kikkawa (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
;Ryoji Arai (author) (Search by this author)Yuya Kanitani (author) (Search by this author)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yoshihiro Kudo (author) (Search by this author)
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900