23 records found.
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Article
- Creator
-
Yoshihiro Irokawa
;
Toshihide Nabatame
;
Tomomi Sawada
;
Manami Miyamoto
;
Hiromi Miura
;
Kazuhito Tsukagoshi
;
Yasuo Koide
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Article
- Creator
-
Hironori Okumura
;
Yohei Ogawara
;
Manabu Togawa
;
Masaya Miyahara
;
Tadaaki Isobe
;
Kosuke Itabashi
;
Jiro Nishinaga
;
Masataka Imura
- Keyword
- GaN, Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Radiation irradiations , Proton, Xe
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Article
- Creator
-
Takayoshi Oshima
;
Masataka Imura
;
Yuichi Oshima
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
- Article
- Creator
-
S. Yamada
;
A. Fujimoto
;
S. Yagi
;
H. Narui
;
E. Yamaguchi
;
Y. Imanaka
- Keyword
- GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
- Date published
- 2024-06-24
- Updated at
- 2024-07-13 08:30:10 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
- Article
- Creator
-
Fumihiko Uesugi
;
Masashi Ishii
- Keyword
- Amorphous structure, TEM image simulation, GaN, persistent homology
- Date published
- 2022-06-06
- Updated at
- 2024-07-04 16:32:11 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- Article
- Creator
-
Shigefusa F. Chichibu
;
Kohei Shima
;
Akira Uedono
;
Shoji Ishibashi
;
Hiroko Iguchi
;
Tetsuo Narita
;
Keita Kataoka
;
Ryo Tanaka
;
Shinya Takashima
;
Katsunori Ueno
;
Masaharu Edo
;
Hirotaka Watanabe
;
Atsushi Tanaka
;
Yoshio Honda
;
Jun Suda
;
Hiroshi Amano
;
Tetsu Kachi
;
Toshihide Nabatame
;
Yoshihiro Irokawa
;
Yasuo Koide
- Keyword
- GaN
- Date published
- 2024-05-14
- Updated at
- 2024-05-09 16:30:16 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Article
- Creator
-
Shunsuke Yamashita
;
Sei Fukushima
;
Jun Kikkawa
;
Ryoji Arai
;
Yuya Kanitani
;
Koji Kimoto
;
Yoshihiro Kudo
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo
- Keyword
- Phonon, GaN, F-43m (216)
- Date published
- Updated at
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo
- Keyword
- Phonon, GaN, P6_3mc (186)
- Date published
- Updated at
- 2023-05-14 19:03:39 +0900